Characterization of reactive ion etch lag scaling

Abstract

Etch rate control in a 27 MHz reactive ion etching system for ultralarge scale integrated circuit processing Characterization of the etch rate non-uniformity in a magnetically enhanced reactive ion etcher Recent advances in ultralarge-scale integration have typically depended on reductions in etched feature size. This has motivated efforts to find etch processes that will precisely etch increasingly smaller features while retaining the ability to etch larger features. As feature sizes push below 0.25 m, reactive ion etch ͑RIE͒ lag control becomes increasingly important. Knowing how RIE lag scales with feature size for a given process aids in determining if that process must be discarded and a new one developed. In those situations where a process cannot be discarded, an understanding of RIE lag scaling aids in predicting fabrication difficulties for a given device design. Using a minimal set of initial assumptions, it is shown that a relationship can be derived which relates etch rate to the time development of the feature aspect ratio. It is then shown that this relationship can be used to derive an expression for the etch depth as a function of time and feature size. The assumptions made are justified by phenomenological observation rather than by an assumed mechanism. This approach enhances the generality of the results obtained, thus making them useful for a variety of practical etch engineering applications.

The effect of electron cyclotron resonance plasma parameters on the aspect ratio of trenches in HgCdTe

“…At 2 mtorr, some H 2 will materials. [16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34] Many of these models failed to explain the etch lag results measured in HgCdTe. However, one particular model, that of Jansen et al 16 …”

InGaAsP/InP based Flattened Ring Resonators with Etched Beam Splitters

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Magnetic nanoparticles: material engineering and emerging applications in lithography and biomedicine

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