The effect of electron cyclotron resonance plasma parameters on the aspect ratio of trenches in HgCdTe

Stoltz, A. J.; Benson, J. D.; Boyd, P. R.; Martinka, M.; Varesi, J. B.; Kaleczyc, A. W.; Smith, E. P.; Johnson, S. M.; Radford, W. A.; Dinan, J. H.

doi:10.1007/s11664-003-0054-x

Cited by 31 publications

(36 citation statements)

References 34 publications

(33 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This figure also shows data from ECR plasma processes from Ref. 20. As expected, higher RF-coupled DC biases lead to high aspect ratios for both ICP and ECR plasmas.…”

Section: Ion Angular Distributionsupporting

confidence: 71%

“…Again, ECR data is included from Ref. 20. Both ICP and ECR processes plasmas have similar ion angular dependence trends and both obey the night vision and electronic sensors directorate (NVESD) modified Jansen and Elwenspoek theory.…”

Section: Ion Angular Distributionmentioning

confidence: 99%

“…[1][2][3][4] Several studies have also reported the effect that high-density ''dry'' electron cyclotron resonance (ECR) plasmas have on HgCdTe epitaxial properties. [5][6][7][8][9][10][11][12][13][14] However, ICP plasma processing, for use in HgCdTe, is still maturing and continued research is needed. 4,7,14,15 ICP plasma processing may also be used to replace conventional wet chemical clean-up, and can even be used in the surface preparation for epitaxy of II-VI materials.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Morphology of Inductively Coupled Plasma Processed HgCdTe Surfaces

Stoltz

Benson

Smith

2008

Journal of Elec Materi

View full text Add to dashboard Cite

Inductively coupled plasma (ICP) processing has become the industrial processing standard for HgCdTe and its related II-VI compounds. In this study ICP processes were developed that allow several microns of HgCdTe to be plasma etched while maintaining a low root-mean-square (RMS) roughness, and even improving the surface roughness in the case of HgCdTe-on-Si. These ICP processes are superior to older electron cyclotron resonance (ECR) plasma etches. The resulting ICP plasma processed surfaces are oxygen and carbon free, have a good reflection high-energy electron diffraction (RHEED) pattern, and have only a small amount of mercury depletion, x = 0.22 to 0.47 (where x is the ratio of Cd to Hg), in the first 25 Å to 30 Å of the HgCdTe. Nanofeatures of the as-grown HgCdTe are retained during the process and are believed to be indicative of the fundamental defect mechanisms in the different HgCdTe etched surfaces. Results from these experiments strongly suggest that ICP plasma processes can be used to delineate pixels, etch vias, clean surfaces, and even produce epi-ready surfaces that would allow HgCdTe to become much more manufacturable, and perhaps allow the replacement of wet processing in HgCdTe.

show abstract

“…This figure also shows data from ECR plasma processes from Ref. 20. As expected, higher RF-coupled DC biases lead to high aspect ratios for both ICP and ECR plasmas.…”

Section: Ion Angular Distributionsupporting

confidence: 71%

Section: Ion Angular Distributionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Morphology of Inductively Coupled Plasma Processed HgCdTe Surfaces

Stoltz

Benson

Smith

2008

Journal of Elec Materi

View full text Add to dashboard Cite

show abstract

“…HDP etching of HgCdTe using low energy Ar ion bombardment has a sputter component at high DC bias values and results in increased Hg removal 32 . The damage depth due to sputtering has been estimated to be <10 nm at operating bias voltage 33 . The properties of sidewall of the mesa may be different and are difficult to characterise.…”

Section: Co-lateral Damages/surface Effectsmentioning

confidence: 99%

Ion Beam Based Techniques for Mercury Cadmium Telluride Infrared Detectors

Pal¹,

Mittal²,

Sharma³

et al. 2009

DSJ

View full text Add to dashboard Cite

The paper reviews the applications of ion beam-based techniques such as ion implantation and ion beam milling, for HgCdTe detector fabrication. Fabrication of large-format arrays and two-color arrays necessitate the use of dry processes. Ion irradiation causes type conversion in HgCdTe. The type conversion is far beyond the damage sites because of Hg in-diffusion to interstitial sites. The dry processes combine high anisotropy, faster etch rates, and better dimensional control, than wet etch processes, but require the damaged region to be removed.

show abstract

“…[1][2][3][4][5][6][7][8][9][10][11][12][13][14] However, ICP plasma processing, used in HgCdTe, is still maturing and continued research is needed. 4,7,14 ICP plasma processing may also be used to replace conventional wet chemical clean-up, and even be used in the surface preparation for epitaxy of II-VI materials.…”

Section: Introductionmentioning

confidence: 99%

Plasma Passivation Etching for HgCdTe

Stoltz

Benson

Smith

2009

Journal of Elec Materi

Self Cite

View full text Add to dashboard Cite

Inductively coupled plasmas (ICP) are the high-density plasmas of choice for the processing of HgCdTe and related compounds. Most dry plasma process works have been performed on HgCdTe for pixel delineation and the p-to-ntype conversion of HgCdTe. We would like to use the advantages of ''dry'' plasma processing to perform passivation etching of HgCdTe. Plasma processing promises the ability to create small vias, 2 lm or less with excellent uniformity across a wafer, good run-to-run uniformity, and good etch rate control. In this study we developed processes to controllably etch CdTe, the most common passivation material used for photovoltaic-based HgCdTe devices. We created a process based on xenon gas that allows for the slow controllable CdTe etch at only 0.035 lm/min, with smooth morphology and rounded corners to promote further processing.

show abstract

The effect of electron cyclotron resonance plasma parameters on the aspect ratio of trenches in HgCdTe

Cited by 31 publications

References 34 publications

Morphology of Inductively Coupled Plasma Processed HgCdTe Surfaces

Morphology of Inductively Coupled Plasma Processed HgCdTe Surfaces

Ion Beam Based Techniques for Mercury Cadmium Telluride Infrared Detectors

Plasma Passivation Etching for HgCdTe

Contact Info

Product

Resources

About