Characterization of NIR InGaAs imager arrays for the JDEM SNAP mission concept

Seshadri, S. R.; Cole, David M.; Hancock, B.; Ringold, P.; Peay, Chris; Wrigley, C.; Bonati, Marco; Brown, Matthew G.; Schubnell, M.; Rahmer, Gustavo; Guzman, Dani; Figer, Donald F.; Tarlè, G.; Smith, Roger M.; Bebek, C.

doi:10.1117/12.673252

Cited by 4 publications

(4 citation statements)

References 8 publications

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“…Performance, described by Seshadri 10 , was commendable for a first attempt, but this technology was not pursued due to the substantial funds deemed necessary to bring large format devices to the same level of maturity as the HgCdTe candidates. The noise performance was comparable to the other detectors at low temperatures but was degraded by dark current in 300s exposures at 140K.…”

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confidence: 99%

Noise and zero point drift in 1.7μm cutoff detectors for SNAP

et al. 2006

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We present the results of a detailed study of the noise performance of candidate NIR detectors for the proposed SuperNova Acceleration Probe. Effects of Fowler sampling depth and frequency, temperature, exposure time, detector material, detector reverse-bias and multiplexer type are quantified. We discuss several tools for determining which sources of low frequency noise are primarily responsible for the sub-optimal noise improvement when multiple sampling, and the selection of optimum fowler sampling depth. The effectiveness of reference pixel subtraction to mitigate zero point drifts is demonstrated, and the circumstances under which reference pixel subtraction should or should not be applied are examined. Spatial and temporal noise measurements are compared, and a simple method for quantifying the effect of hot pixels and RTS noise on spatial noise is described.

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confidence: 99%

Noise and zero point drift in 1.7μm cutoff detectors for SNAP

et al. 2006

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“…The dark current is 4.0 ± 0.8 nA. To our knowledge, EQE ≈ 100% is the highest reported for InGaAs imagers. ,,− …”

Section: Resultsmentioning

confidence: 99%

Flexible Thin-Film InGaAs Photodiode Focal Plane Array

2016

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10×10 photodiode array fabricated on Si and Kapton ® substrateThe 10×10 thin-film In 0.53 Ga 0.47 As p-i-n photodiode arrays are fabricated on both a 500 µm thick semi-insulating Si substrate and a 25 µm thick E-type Kapton ® foil. The fabrication processes of 10×10 arrays are similar to that of the 8×100 photodiode array, although the photodiode dimensions are different. For the 10×10 arrays, the top ring contacts have 20 µm/30 µm inner/outer diameters that define the light detection area. Photodiode mesa diameters are 40 µm, with 100 µm pixel separations. The back side linear contacts are 5 µm wide to connect the photodiode rows, and top linear contact columns are also 5 µm wide. A MgF 2 (81 nm)/TiO 2 (113

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“…Indeed InGaAs detectors and imagers at this composition are presently used in commercial Dense Wavelength Division Multiplexing (DWDM) telecommunications, surveillance, military and aerospace applications. 3,4 Despite these potential advantages, the use of InGaAs-based arrays for scientific imaging in the near-infrared is minimal 5 and not widespread. In terms of performance, InGaAs detectors with high, flat QE already exist.…”

Section: Introductionmentioning

confidence: 99%

“…In terms of performance, InGaAs detectors with high, flat QE already exist. 5 Technologically, a transparent InP substrate and substrate removal technology, such as that used to increase short wavelength performance and minimize cut-off wavelength non-uniformities and cosmic ray effects in HgCdTe, also exists. These advantages offer imagers based on InGaAs technology the potential to be a lower cost, higher reliability alternative to those based on HgCdTe.…”

Section: Introductionmentioning

confidence: 99%

Comparing the low-temperature performance of megapixel NIR InGaAs and HgCdTe imager arrays

et al. 2007

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We compare a more complete characterization of the low temperature performance of a nominal 1.7um cutoff wavelength 1kx1k InGaAs (lattice-matched to an InP substrate) photodiode array against similar, 2kx2k HgCdTe imagers to assess the suitability of InGaAs FPA technology for scientific imaging applications. The data we present indicate that the low temperature performance of existing InGaAs detector technology is well behaved and comparable to those obtained for state-of-the-art HgCdTe imagers for many space astronomical applications. We also discuss key differences observed between imagers in the two material systems.

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Characterization of NIR InGaAs imager arrays for the JDEM SNAP mission concept

Cited by 4 publications

References 8 publications

Noise and zero point drift in 1.7μm cutoff detectors for SNAP

Noise and zero point drift in 1.7μm cutoff detectors for SNAP

Flexible Thin-Film InGaAs Photodiode Focal Plane Array

Comparing the low-temperature performance of megapixel NIR InGaAs and HgCdTe imager arrays

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