Comparing the low-temperature performance of megapixel NIR InGaAs and HgCdTe imager arrays

Seshadri, S. R.; Cole, David M.; Hancock, B.; Ringold, P.; Peay, Chris; Wrigley, C.; Bonati, Marco; Brown, Matthew G.; Schubnell, M.; Rahmer, Gustavo; Guzman, Dani; Figer, Donald F.; Tarlè, G.; Smith, Roger M.; Bebek, C.

doi:10.1117/12.734739

Cited by 5 publications

(1 citation statement)

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“…However, due to the limitation of Si's own forbidden band width (1.12 eV) [3] , its spectral response is cut off near 1100 nm, which results in conventional Si-based photodetectors unable to respond to photons in the infrared band. Some new semiconductor materials such as InGaAs/HgCdTe [4] and ferroelectric materials [5] such as barium strontium titanate using pyroelectric effect have a wider response spectrum, however, these kinds of materials not only have difficulty in raw material preparation, but the device design and fabrication technology are both immature, which led to their high fabrication cost unable to fully replace the current Si-based optoelectronic sensor devices. At the end of the 20th century, E. Mazur [6] used femtosecond lasers to etch spike-like micro-and nano-structures (black silicon) on the surface of silicon wafers in SF6 atmosphere.…”

Section: Introductionmentioning

confidence: 99%

Photoelectric characteristics of different micro structures of black silicon etched by femtosecond laser

Zhang

Zhu

Liu

et al. 2023

Ninth Symposium on Novel Photoelectronic Detection Technology and Applications

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Black silicon, which is characterized as numerous nanospikes induced on bulk silicon, has recently attracted great attention due to its fascinating photoelectric property. Compared with the traditional silicon-based photoelectric sensor, photoelectric sensors based on the black silicon doped with supersaturated chalcogens have shown both excellent photoelectric corresponding efficiency in the visible range and considerable optical absorption efficiency in the near infrared band due to the impurity energy-level introduced by the chalcogens element supersaturated doping. Nonetheless, the differences of surface morphology greatly affect the photoelectric efficiency of black silicon photoelectric sensors, which is quite difficult to control in practice. As one of the mainstream methods in black silicon fabrication, femtosecond laser etching exhibits the ability in manipulate different dimensionality and configurations and provide a clear and flexible research platform. Black silicon can be etched on traditional silicon-based photoelectric sensor with different size of surface morphology according to the size of surface thickness. In this work, by varying the etching energy density of the femtosecond laser, three kinds of black silicon samples with different surface morphology were obtained. At the same time, the surface morphology, size, visible-infrared absorptivity and photoelectric conversion efficiency of black silicon were characterized by scanning electron microscope, spectrophotometer and confocal Raman spectroscopy, etc. We got three sample characterization data, the minimum morphology depth of black silicon can be controlled at 2μm, the maximum visible light absorption efficiency can reach 90%, and the near-infrared absorption efficiency can reach 60% before annealing. Naturally, the photoelectric conversion efficiency has been proven to be significantly improved. Based on the observation of experimental results, it is an important step to understand the photoelectric characteristic of black silicon with different morphologies, which is the application of black silicon in different fields.

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