2005
DOI: 10.1016/j.tsf.2004.12.010
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Characterization of low temperature photo-assisted metal-organic chemical vapor deposited copper films using hexafluoroacetylacetonate copper(I) trimethylvinylsilane as precursor

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Cited by 8 publications
(3 citation statements)
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“…Copper has been photodeposited in the form of nanoparticles and thin films using UV and visible light excitation from a small number of precursors . The bulk of the research on copper precursors was done on Cu(hfac)(TMVS) (hfac = 1,1,1,5,5,5-hexafluoro-2,4-pentanedionato; TMVS = trimethylsilylethene), Cu(hfac) 2 , and Cu(TMHD) 2 . Other copper precursors that have been studied include Cu(hfac)(COD) (COD = 1,5-cyclooctadiene), Cu(hfac)(MHY) (MHY = 2-methyl-1-hexene-3-yne), Cu(acac) 2 (acac = 2,4-pentanedionato), CuCp(Et 3 P) (Cp = cyclopentadienyl; Et 3 P = triethylphosphine), Cu(tfa) 2 (tfa = 1,1,1-trifluoro-5,5-dimethyl-2,4-hexanedionato), and Cu(baa) 2 (baa = tert -butylacetoacetato) …”
Section: Introductionmentioning
confidence: 99%
“…Copper has been photodeposited in the form of nanoparticles and thin films using UV and visible light excitation from a small number of precursors . The bulk of the research on copper precursors was done on Cu(hfac)(TMVS) (hfac = 1,1,1,5,5,5-hexafluoro-2,4-pentanedionato; TMVS = trimethylsilylethene), Cu(hfac) 2 , and Cu(TMHD) 2 . Other copper precursors that have been studied include Cu(hfac)(COD) (COD = 1,5-cyclooctadiene), Cu(hfac)(MHY) (MHY = 2-methyl-1-hexene-3-yne), Cu(acac) 2 (acac = 2,4-pentanedionato), CuCp(Et 3 P) (Cp = cyclopentadienyl; Et 3 P = triethylphosphine), Cu(tfa) 2 (tfa = 1,1,1-trifluoro-5,5-dimethyl-2,4-hexanedionato), and Cu(baa) 2 (baa = tert -butylacetoacetato) …”
Section: Introductionmentioning
confidence: 99%
“…Both classical copper (II) complexes and copper (I) compounds are used as precursors (3,4). In a number of works (3,5,6), UV-stimulation is used to decrease the process temperature. The influence of UV radiation on the mechanism and morphology of the deposited copper films was studied in Ref.…”
Section: Introductionmentioning
confidence: 99%
“…In general, high-power UV beams or lasers are used as activating sources in metal organic chemical vapor deposition (MOCVD). 4) In other cases, they have been applied for annealing materials such as silicon and high-k dielectric film, where k is the dielectric constant. Hatano et al used a pulsed KrF excimer laser ( ¼ 248 nm) to improve both device performance and uniformity by changing the microstructures of silicon films, because pulsed laser crystallization is an efficient technology for obtaining polycrystalline silicon thin film transistors.…”
Section: Introductionmentioning
confidence: 99%