Articles you may be interested inInfluence of annealing temperature on electronic and dielectric properties of ZrO2 thin films on Si AIP Conf.Conduction mechanisms and reliability of thermal Ta 2 O 5 -Si structures and the effect of the gate electrode J. Appl. Phys. 97, 094104 (2005); 10.1063/1.1884758Interfaces between 4H-SiC and Si O 2 : Microstructure, nanochemistry, and near-interface traps Metal-oxide-semiconductor capacitors that incorporate ZrO 2 gate dielectrics were fabricated by radio frequency magnetron sputtering. In this work, the essential structures and electrical properties of ZrO 2 thin films were investigated. C-V, energy dispersive x-ray spectrometry, and transmission electron microscopy analyses reveal that an interfacial layer was formed, subsequently reducing the k value of the annealed ZrO 2 thin films. Additionally, the mechanisms of conduction of the Al/ ZrO 2 / p-Si metal/zirconium oxide/semiconductor structure were studied with reference to plots of standard Schottky emission, modified Schottky emission, and Poole-Frenkel emission. According to those results, the dominant mechanisms at high temperatures ͑Ͼ425 K͒ are Poole-Frenkel emission and Schottky emission in low electric fields ͑Ͻ0.6 MV/ cm͒ and high electric fields ͑ Ͼ1 MV/cm͒, respectively. Experimental results indicate that the Al/ ZrO 2 barrier height is 0.92 eV and the extracted trap level is about 1.1 eV from the conduction band of ZrO 2 . The modified Schottky emission can be applied in an electric field to ensure that the electronic mean free path of the insulator is less than its thickness. According to the modified Schottky emission model, the extracted electronic mobility of ZrO 2 thin films is around 13 cm 2 / V s at 475 K. The mean free path of transported electrons in ZrO 2 thin films is between 16.2 and 17.4 nm at high temperatures ͑425-ϳ 475 K͒.
The characterizations of optical dielectric function of the cerium dioxide (CeO 2 ) were made by the spectroscopic ellipsometry (SE) technique using Kramers-Kronig relation and Tauc-Lorentz (TL) dispersion model. The results showed that the bandgap energy and refractive index of the CeO 2 are about 3.32 eV and 2.18, respectively. According to the optical properties, the current conduction mechanisms in CeO 2 thin films are Poole-Frenkel emission in high electric fields (> 2.36 MV/cm) at 450-500 K and Schottky emission in medium electric fields (0.5-1.6 MV/cm) at 350-500 K. Consequently, the trap energy level and the Al/CeO 2 barrier height are determined to be about 1.57±0.01 eV and 0.63±0.01 eV, respectively.
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