Al2O3 with Metal-Nitride nanocrystals as a charge trapping layer of MONOS-type nonvolatile memory devices

Choi, Seong Hee; Kim, S. S.; Yang, Hongtian; Chang, Ming Xian; Jeon, Sang-Ho; Kim, C.; Kim, D. Y.; Hwang, Huey-Liang

doi:10.1016/j.mee.2005.04.078

Cited by 10 publications

(5 citation statements)

References 4 publications

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“…Unlike previous approaches, [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23] the current layered nanolaminate was fabricated using ALD according to the schematic diagram shown in Fig. 1a and the corresponding energy band diagram of Fig.…”

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confidence: 99%

Comparison of Nonvolatile Memory Effects in Ni-Based Layered and Dotted Nanostructures Prepared through Atomic Layer Deposition

Lee

Kim

Hwang

et al. 2011

Electrochem. Solid-State Lett.

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Nano-floating gate memory devices were fabricated by using nickel nanocrystals as a charge-trapping portion embedded into Al 2 O 3 thin films. Ni nanocrystals were prepared via a thermal reduction of nanoscale NiO layers deposited by atomic layer deposition. Although the continuous deposition of insulating Al 2 O 3 and semiconducting NiO thin films allowed the facile fabrication of charge-trap, the corresponding retention feature suffers from inferior charge trapping/detrapping. On the other hand, the Ni nanocrystals enhanced the retention behavior and exhibited the largest memory window of 13.8 V with the stored charge density of 2.5 Â 10 13 traps/cm 2 , probably due to the isolated formation of charge-trapping centers.Next-generation non-volatile memories will have to meet stringent device performance requirements, such as higher speed, enhanced data storage density, limited device space, and lower power consumption, in addition to possessing nonvolatile features in data storage mode. In particular, nano-floating gate memories (NFGMs) are the dominant type of memory compared to their current competitors, such as phase-change random access memories (RAMs), resistive RAMs, polymer RAMs, magnetic RAMs etc. 1-7 NFGM performance far exceeds the currently-evolved flash memories and dynamic random access memories in terms of operation voltage, consumption power, and data volatility. Further, NFGMs can be effectively adapted to the pre-existing Si processing/technology through the incorporation of sophisticated thin dielectric layers. The performance of NFGMs depends largely upon the delicate function of the charge-trapping materials embedded into the high-k thin films. Furthermore, NFGMs should meet stringent requirements of nonvolatile memories: fast programming/erasing speed, high-number programming/easing cycles, and long-period charge retention.A typical strategy is to combine high-k dielectric materials (Al 2 O 3 , ZrO 2 , HfO 2 , etc. 8-22 ) with metallic and semiconducting nanocrystals such as Pt, Au, Co, Ge, Ni, and silicides. In particular, Ni-based nanocrystals were attempted in the combined form of physical deposition and post thermal treatments. 18-23 The formation of charge-trapping nanocrystals has been shown through physical and chemical deposition of metallic or semiconducting layers followed by thermal or optical annealing or chemical dispersion of nanocrystals onto the dielectric thin films. Those approaches suffer from the disadvantage that processing is discontinuous, while facile continuous processing would be preferred.Since the introduction of atomic layer deposition (ALD) by Suntola, 24 ALD has been gaining widespread attention in semiconductors and flat-panel displays, owing to conformal coverage in lowdimensional structures, superior control in film thickness and robust dielectrics. ALD was employed to continuously deposit insulating and charge-trapping layers without any process interruptions. 25 A semiconducting oxide, such as nickel oxide (NiO), has been proposed as a candidate for charge-...

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mentioning

confidence: 99%

Comparison of Nonvolatile Memory Effects in Ni-Based Layered and Dotted Nanostructures Prepared through Atomic Layer Deposition

Lee

Kim

Hwang

et al. 2011

Electrochem. Solid-State Lett.

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“…The peak in the range of 396-397 eV can be generally ascribed to the N Ti N bonds formed by the replacement of O atoms in the TiO 2 crystal lattice by ␤-N atoms [42], and the peak at 400.0 eV can be attributed to the adsorption of NO species on the crystalline surface, which indicated the formation of Ti O N bonding [42,43]. Simson et al [44] and Choi et al [45] have reported that the peaks at approximately 398.2 eV can be assigned to the N Al bond. Therefore, in the present study, the peaks at 396.6 and 398.6 eV are likely attributable to the replacement of oxygen with ␤-N in the crystal lattice of TiO 2 and Al 2 O 3 , respectively, whereas the peak at 400.0 eV is attributed to chemisorbed NO species.…”

Section: Xps Patternsmentioning

confidence: 97%

N-doped P25 TiO2–amorphous Al2O3 composites: One-step solution combustion preparation and enhanced visible-light photocatalytic activity

Zhao

Hao

et al. 2012

Journal of Hazardous Materials

133

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“…High workfunction metals such as the following: 1) platinum (Pt); 2) gold (Au); 3) nickel (Ni); 4) tungsten (W), etc., [6]- [8], [16]- [19] have been studied. Less than 5 V of memory window was typically reported for SL metal NC devices [7], [8], [17], [20]- [22]; though the use of a metal NC has been shown to have improved both the memory window and retention over semiconductor NC devices [18], [19]. In author's previous work on SL, Pt NC devices [23], a large memory window (∼10 V), and excellent retention were reported by optimizing the NC process flow to achieve a large NC number density (> 3 × 10 12 cm −2 , compared to < 1 × 10 12 cm −2 in most prior works) and area coverage (∼30%).…”

Section: Introductionmentioning

confidence: 96%

Performance and Reliability Study of Single-Layer and Dual-Layer Platinum Nanocrystal Flash Memory Devices Under NAND Operation

Singh

Bisht

Auluck

et al. 2010

IEEE Trans. Electron Devices

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Abstract-Memory window (MW) and the retention of singlelayer (SL) and dual-layer (DL) platinum (Pt) nanocrystal (NC) devices are extensively studied before and after program/erase (P/E) cycling. DL devices show better charge storage capability and reliability over the SL devices. Up to 50% improvement in the stored charge is estimated in the DL device over SL when P/E is performed at equal field. Excellent high temperature and postcycling retention capabilities of SL and DL devices are shown. The impact of the interlayer film (ILF) thickness on the retention of the DL structure is reported. While SL devices show poor P/E cycling endurance, DL cycling is shown to meet the minimum requirements of the multilevel cell (MLC) operation.

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Al2O3 with Metal-Nitride nanocrystals as a charge trapping layer of MONOS-type nonvolatile memory devices

Cited by 10 publications

References 4 publications

Comparison of Nonvolatile Memory Effects in Ni-Based Layered and Dotted Nanostructures Prepared through Atomic Layer Deposition

Comparison of Nonvolatile Memory Effects in Ni-Based Layered and Dotted Nanostructures Prepared through Atomic Layer Deposition

N-doped P25 TiO2–amorphous Al2O3 composites: One-step solution combustion preparation and enhanced visible-light photocatalytic activity

Performance and Reliability Study of Single-Layer and Dual-Layer Platinum Nanocrystal Flash Memory Devices Under NAND Operation

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