Process Development of Small Form Factor Optical Recording Disk

Abstract

PACS. 61.50E -Crystal symmetry: models and space groups, and crystalline systems and classes. PACS. 61.55H -Alloys.Abstract. -We report the observation of an icosahedral structure in a new alloy system: meltspun Als4VI6. In the .as cast. alloys, homogeneous large icosahedral grains with an average diameter of about 2 pm are observed. From high-resolution STEM X-ray analyses the compositional homogeneity in and around the grains is determined. We discuss the structural studies on i(A1-V) in terms of known structures of the related crystalline alloys, and the relevance of a recent <<modified-projection-approach. by Elser in generating the icosahedral structure from six-dimensional lattice.

High Mobility In-Ga-Zn-oxide Thin-film Transistor with Sb₂TeO_x Gate Insulator Fabricated by Reactive Sputtering

“…x Te 1-x materials are the typical chalcogenide alloys, which show fast and reversible transitions between resistive amorphous and conductive crystalline phases. These materials are usually used for non-volatile memory called phase change random access memory (PRAM) [10], and for high-density optical recording media [11]. On the other hand, these materials could be easily oxidized by a reactive sputtering at the normal condition.…”