Characterization of lattice-matched single In_1-xGa_xAs_yP_1-yquantum wells grown by conventional liquid phase epitaxy

Abstract

In this letter the liquid phase.epitaxial growth of Ino.,, Gao.aAso.sePo.a2 (Ag = 1.32 pn) single quantum well structures lattice matched to (001) InP substrates is repotted. The electrical and optical confinement was formed either by InP or Ino.saG~.,2Aso.26P0,74 (Ag = 1.05 pm). Low-temperature photoluminescence was employed to prove the samples capable of displaying quantum size effects. Energy upshifts up to 125 meV were measured for InP-clad quantum wells of about 50 b, thickness. All multilayered stacks originate from step-cooling growth