Characterization of InAs_0.91Sb_0.09for use in mid-infrared light-emitting diodes grown by liquid phase epitaxy from Sb-rich solution

Abstract

The liquid phase epitaxial growth of InAs 0.91 Sb 0.09 lattice-matched onto GaSb is reported for use in the active region of a mid-infrared light-emitting diode. Epitaxy was carried out from Sb-rich solution using Gd gettering to purify the material. The photoluminescence and electroluminescence emission spectra were studied over the temperature range 4-300 K using different excitation intensities. Interpretation of the resulting spectra revealed the existence of two acceptor levels with activation energies of 8 meV and 16 meV. Room temperature electroluminescence at 4.2 µm was readily obtained from homo-junction p-i-n diodes fabricated from this material. The temperature dependence of the electroluminescence was studied and the decrease in the radiative recombination coefficient was found to be primarily responsible for the luminescence quenching.

Electroluminescence enhancement in mid-infrared InAsSb resonant cavity light emitting diodes for CO2 detection

“…Various LED structures have been developed for CO2 monitoring at 4.2 µm [9][10][11][12] , including bulk heterostructures of InAsSbP/InAsSb 13 , AlInSb 14 , InAsSb 15 , as well as InSb/InAs quantum dots 16 , InAs/InAsSb quantum wells and superlattices 3,5,17,18 . These devices typically exhibit 300 K output powers of a few microwatts, with an emittance of ~1-14 mW/cm -2 , but with broadband emission spectra resulting in low available power at the target wavelength.…”

Design and analytical modeling of high-performance mid-wavelength infrared photodetectors: an nBn architecture

“…Parameters used for device modeling and simulation are taken from various literature sources. 8,28,30,[35][36][37][38][39][40][41][42][43][44][45][46][47] Various useful relations and equations employed in modeling the current device could be found in existing literature. 13,23,30,35,36,[48][49][50][51][52][53][54][55][56] Table 1.…”

Growth and characterization of InAsSb layers on GaSb substrates by liquid phase epitaxy

“…Unfortunately, high quality layer grown by LPE can only be obtained when the lattice mismatch between the semiconductor film and the substrate is very small (typically less than 1%). Thus, suitable substrates for LPE growth of InAs 1 À x Sb x include only InAs, InSb and GaSb [5][6][7]. High crystalline quality of epitaxial layers of composition InAs 0.91 Sb 0.09 have been grown on GaSb substrates by LPE with a bandgap energy corresponding to 4.2 μm at room temperature, which is of interest for the fabrication of optoelectronic components for use in infrared CO 2 sensors [8].…”