Characterization of fully depleted CMOS active pixel sensors on high resistivity substrates for use in a high radiation environment

Hirono, T.; Barbero, M.; Breugnon, P.; Godiot, S.; Hemperek, T.; Huegging, F.; Janssen, J.; Krüger, H.; Liu, Jian; Pangaud, P.; Perić, I.; Pohl, D.; Rozanov, A.; Rymaszewski, P.; Wermes, N.

doi:10.1109/nssmic.2016.8069902

Cited by 13 publications

(21 citation statements)

References 13 publications

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“…Its depth can vary from 750 µm to 100 µm after backside processing. The generated strong and uniform electric field ensures high radiation tolerance to Non Ionizing Energy Loss (NIEL) damage and high charge collection efficiency [4,6]. The disadvantage of this implementation is the large sensor capacitance (≈ 300 − 400 f F) that degrades the analog performance in terms of noise and signal rise time, and has to be compensated with increased power consumption.…”

Section: Sensor Implementationmentioning

confidence: 99%

“…The LF-Monopix chip [6,7,10] is the successor to CCPD LF and LF-CPIX [4,6] development line in 150 nm LFoundry technology and the first to incorporate a full standalone fast readout. It consists of a 129x36 matrix of pixels with 50x250 µm 2 size, while its total size is 10x9.5 mm 2 .…”

Section: Lf-monopix Chip Designmentioning

confidence: 99%

“…Moreover they must be able to comply with the 25ns timing requirement of the ATLAS experiment. DMAPS prototypes manufactured in different technologies have been reported with encouraging results regarding the sensor radiation tolerance [4,5,6,7]. Additionally, multiple nested wells offered by modern CMOS processes allow for complex readout circuitry to be implemented inside the pixel, enabling the use of fast readout architectures.…”

Section: Introductionmentioning

confidence: 99%

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CMOS monolithic pixel sensors based on the column-drain architecture for the HL-LHC upgrade

Moustakas

Barbero

Berdalovic

et al. 2019

Nuclear Instruments and Methods in Physics Research Section A:

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Depleted Monolithic Active Pixel Sensors (DMAPS) constitute a promising low cost alternative for the outer layers of the ATLAS experiment Inner Tracker (ITk). Realizations in modern, high resistivity CMOS technologies enhance their radiation tolerance by achieving substantial depletion of the sensing volume. Two DMAPS prototypes that use the same "column-drain" readout architecture and are based on different sensor implementation concepts named LF-Monopix and TJ-Monopix have been developed for the High Luminosity upgrade of the Large Hardon Collider (HL-LHC) . LF-Monopix was fabricated in the LFoundry 150 nm technology and features pixel size of 50x250 µm 2 and large collection electrode opted for high radiation tolerance. Detection efficiency up to 99% has been measured after irradiation to 1 · 10 15 n eq /cm 2 . TJ-Monopix is a large scale (1x2 cm 2 ) prototype featuring pixels of 36x40 µm 2 size. It was fabricated in a novel TowerJazz 180 nm modified process that enables full depletion of the sensitive layer, while employing a small collection electrode that is less sensitive to crosstalk. The resulting small sensor capacitance (<= 3 f F) is exploited by a compact, low power front end optimized to meet the 25ns timing requirement. Measurement results demonstrate the sensor performance in terms of Equivalent Noise Charge (ENC) ≈ 11e − , threshold ≈ 300 e − , threshold dispersion ≈ 30 e − and total power consumption lower than 120 mW/cm 2 .

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Section: Sensor Implementationmentioning

confidence: 99%

Section: Lf-monopix Chip Designmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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CMOS monolithic pixel sensors based on the column-drain architecture for the HL-LHC upgrade

Moustakas

Barbero

Berdalovic

et al. 2019

Nuclear Instruments and Methods in Physics Research Section A:

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“…CMOS pixels with depleted sensing volume, also labelled as depleted monolithic active pixel sensors (DMAPS), can be achieved by exploiting the high-resistivity and/or high-voltage add-ons of modern CMOS technologies. Many such devices have been reported, showing high radiation tolerance towards the requirements of experiments in the High-Luminosity LHC (HL-LHC) era [5][6][7][8]. Moreover, multiple nested wells, available in many commercial CMOS processes, allow to implement full CMOS electronics inside the pixel (see Section 2), and therefore fast readout architectures like hybrid pixels are possible, beyond the rolling shutter readout traditionally used in MAPS.…”

Section: Introductionmentioning

confidence: 99%

Depleted fully monolithic CMOS pixel detectors using a column based readout architecture for the ATLAS Inner Tracker upgrade

Wang¹,

Barbero²,

Berdalovic³

et al. 2018

J. Inst.

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A: Depleted monolithic active pixel sensors (DMAPS), which exploit high voltage and/or high resistivity add-ons of modern CMOS technologies to achieve substantial depletion in the sensing volume, have proven to have high radiation tolerance towards the requirements of ATLAS in the high-luminosity LHC era. Depleted fully monolithic CMOS pixels with fast readout architectures are currently being developed as promising candidates for the outer pixel layers of the future ATLAS Inner Tracker, which will be installed during the phase II upgrade of ATLAS around year 2025. In this work, two DMAPS prototype designs, named LF-MonoPix and TJ-MonoPix, are presented. LF-MonoPix was designed and fabricated in the LFoundry 150 nm CMOS technology, and TJ-MonoPix has been designed in the TowerJazz 180 nm CMOS technology. Both chips employ the same readout architecture, i.e. the column drain architecture, whereas different sensor implementation concepts are pursued. The design of the two prototypes will be described. First measurement results for LF-MonoPix will also be shown. K: Depleted monolithic CMOS pixels, particle tracking detectors (solid-state detectors), Front-end electronics for detector readout, VLSI circuit 1Corresponding author.

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“…The CMOS-CSA has the lowest power consumption among the three types. The PMOS-CSA has the largest power consumption, but it has been tested in many previous DMAPS prototypes and is confirmed to have acceptable radiation hardness [4,6]. The NMOS-CSA has a simpler design than the CMOS-CSA and lower power consumption than the PMOS-CSA.…”

Section: Prototypesmentioning

confidence: 99%

Depleted fully monolithic active CMOS pixel sensors (DMAPS) in high resistivity 150 nm technology for LHC

Hirono

Barbero

Barrillon

et al. 2019

Nuclear Instruments and Methods in Physics Research Section A:

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Depleted monolithic CMOS active pixel sensors (DMAPS) have been developed in order to demonstrate their suitability as pixel detectors in the outer layers of a toroidal LHC apparatus inner tracker (ATLAS ITk) pixel detector in the high-luminosity large hadron collider (HL-LHC). Two prototypes have been fabricated using 150 nm CMOS technology on high resistivity (≥ 2 kΩ·cm 2 ) wafers. The chip size is equivalent to that of the current ATLAS pixel detector readout chip. One of the prototypes is used for detailed characterization of the sensor and the analog readout of the DMAPS. The other is a fully monolithic DMAPS including fast readout digital logic that handles the required hit rate. In order to yield a strong homogeneous electric field within the sensor volume, thinning of the wafer was tested. The prototypes were irradiated with X-ray up to a total ionization dose (TID) of 50 Mrad and with neutrons up to non-ionizing energy loss (NIEL) of 10 15 n eq /cm 2 . The analog readout circuitry maintained its performance after TID irradiation, and the hit-efficiency at > 10 −7 noise occupancy was as high as 98.9 % after NIEL irradiation.

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Characterization of fully depleted CMOS active pixel sensors on high resistivity substrates for use in a high radiation environment

Cited by 13 publications

References 13 publications

CMOS monolithic pixel sensors based on the column-drain architecture for the HL-LHC upgrade

CMOS monolithic pixel sensors based on the column-drain architecture for the HL-LHC upgrade

Depleted fully monolithic CMOS pixel detectors using a column based readout architecture for the ATLAS Inner Tracker upgrade

Depleted fully monolithic active CMOS pixel sensors (DMAPS) in high resistivity 150 nm technology for LHC

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