Characterization of epitaxial 4H-SiC for photon detectors

Dubecký, F.; Gombia, E.; Ferrari, C.; Затько, Б.; Vanko, G.; Baldini, M.; Kováč, J.; Bacek, D.; Kováč, Peter; Hrkut, P.; Nečas, Vladimı́r

doi:10.1088/1748-0221/7/09/p09005

Cited by 18 publications

(11 citation statements)

References 23 publications

(31 reference statements)

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“…Very good radiation hardness was acquired in a study 7 in which detectors were exposed to gamma radiation produced by 137 Cs with doses up to 5.5 MGy, and no significant deterioration in detection of -particles emitted by 238 Pu radioisotope was observed. In addition, our previous work 8 showed only a weak deterioration of the detected gamma spectrum from 241 Am after fast neutrons and gamma irradiation. Characterizations of the depletion region length of a 4H-SiC Schottky detector using a 90 Sr β-source have also been realized.…”

Section: Introductionmentioning

confidence: 74%

Detection of fast neutrons from D–T nuclear reaction using a 4H–SiC radiation detector

Затько

Šagátová

Sedlačková

et al. 2016

Int. J. Mod. Phys. Conf. Ser.

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The particle detector based on a high purity epitaxial layer of 4H-SiC exhibits promising properties in detection of various types of ionizing radiation. Due to the wide band gap of 4H-SiC semiconductor material, the detector can reliably operate at room and also elevated temperatures. In this work we focused on detection of fast neutrons generated the by D-T (deuterium-tritium) nuclear reaction. The epitaxial layer with a thickness of 105 m was used as a detection part. B. Zatko et al. 1660235-2A circular Schottky contact of a Au/Ni double layer was evaporated on both sides of the detector material. The detector structure was characterized by current-voltage and capacitance-voltage measurements, at first. The results show very low current density (<0.1 nA/cm 2 ) at room temperature and good homogeneity of free carrier concentration in the investigated depth. The fabricated detectors were tested for detection of fast neutrons generated by the D-T reaction. The energies of detected fast neutrons varied from 16.0 MeV to 18.3 MeV according to the acceleration potential of deuterons, which increased from 600 kV up to 2 MV. Detection of fast neutrons in the SiC detector is caused by the elastic and inelastic scattering on the silicon or carbide component of the detector material. Another possibility that increases the detection efficiency is the use of a conversion layer. In our measurements, we glued a HDPE (high density polyethylene) conversion layer on the detector Schottky contact to transform fast neutrons to protons. Hydrogen atoms contained in the conversion layer have a high probability of interaction with neutrons through elastic scattering. Secondary generated protons flying to the detector can be easily detected. The detection properties of detectors with and without the HDPE conversion layer were compared.

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Section: Introductionmentioning

confidence: 74%

Detection of fast neutrons from D–T nuclear reaction using a 4H–SiC radiation detector

Затько

Šagátová

Sedlačková

et al. 2016

Int. J. Mod. Phys. Conf. Ser.

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“…Although the large area samples still suffer from cracking of the thin 3C SiC film during the removal of the CVD silicon substrate, the grown crystals show a high material quality, proved by the low full width half maximum (FWHM) of X-ray diffraction (XRD) measurements of the (002) reflex, which were as low as 140 arcsec. Note: Although a lot of research has been conducted to improve the material quality, the FWHM XRD rocking curve values for 3C SiC are still higher compared to 4H SiC where values in the range of 10 arcsec can be found in the literature [ 145 , 146 ]. Besides low FWHM values, it could be shown that the SF density as well as the overall stress in sublimation-grown 3C SiC crystal could be decreased compared to the heteroepitaxial-grown material on Si [ 143 , 147 ].…”

Section: Silicon Carbide Materialsmentioning

confidence: 99%

Novel Photonic Applications of Silicon Carbide

Shi

et al. 2023

Materials

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Silicon carbide (SiC) is emerging rapidly in novel photonic applications thanks to its unique photonic properties facilitated by the advances of nanotechnologies such as nanofabrication and nanofilm transfer. This review paper will start with the introduction of exceptional optical properties of silicon carbide. Then, a key structure, i.e., silicon carbide on insulator stack (SiCOI), is discussed which lays solid fundament for tight light confinement and strong light-SiC interaction in high quality factor and low volume optical cavities. As examples, microring resonator, microdisk and photonic crystal cavities are summarized in terms of quality (Q) factor, volume and polytypes. A main challenge for SiC photonic application is complementary metal-oxide-semiconductor (CMOS) compatibility and low-loss material growth. The state-of-the-art SiC with different polytypes and growth methods are reviewed and a roadmap for the loss reduction is predicted for photonic applications. Combining the fact that SiC possesses many different color centers with the SiCOI platform, SiC is also deemed to be a very competitive platform for future quantum photonic integrated circuit applications. Its perspectives and potential impacts are included at the end of this review paper.

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“…Neutron converters are used to increase the detection efficiency. Thermal neutrons are commonly detected using 10 B or 6 Li, and for fast neutrons a High Density PolyEthylene (HDPE) layer is used [4,5]. X-rays and gamma rays are also detected using SiC detectors at high energy resolutions [6,7].…”

Section: Introductionmentioning

confidence: 99%

“…Thermal neutrons are commonly detected using 10 B or 6 Li, and for fast neutrons a High Density PolyEthylene (HDPE) layer is used [4,5]. X-rays and gamma rays are also detected using SiC detectors at high energy resolutions [6,7]. We recently prepared a pixelated SiC detector for a Timepix3 readout chip [8].…”

Section: Introductionmentioning

confidence: 99%

Imaging and spectrometric performance of SiC Timepix3 radiation camera

Zaťko,

Šagátová,

Hrubčín

et al. 2024

J. Inst.

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A Schottky barrier radiation detector and pixel imaging sensor fabricated from epitaxially grown SiC semiconductor were analyzed. The detector was based on an 80 μm thick epitaxial SiC layer. Capacitance-voltage measurement was performed to study the thickness of the space charge region of the detector as a function of applied bias. The results showed that the detector was completely depleted at a reverse bias higher than 300 V. The impurity concentration profile was also calculated, which indicated a net impurity concentration below 1.5×1014 cm-3. A prototype of a SiC Timpix3 radiation camera was fabricated, and its energy resolution was investigated using the 241Am radioisotope. The camera exhibited an energy resolution of 4.5 keV for 60 keV gamma photons. X-ray fluorescence photons (from 14 keV to 22 keV) were detected with a resolution below 2.0 keV. The imaging quality of the camera was investigated using a test object. The prototype showed a high-quality image performance with a stable count rate, which was determined from uniform intensity profiles extracted from parts of the test object image. A disadvantage of this prototype is that the radiation hits the detector from the side of the substrate and only then it reaches its active SiC epitaxial layer. This represents a dead layer that reduced the detection efficiency of X-rays below 10 keV.

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Characterization of epitaxial 4H-SiC for photon detectors

Cited by 18 publications

References 23 publications

Detection of fast neutrons from D–T nuclear reaction using a 4H–SiC radiation detector

Detection of fast neutrons from D–T nuclear reaction using a 4H–SiC radiation detector

Novel Photonic Applications of Silicon Carbide

Imaging and spectrometric performance of SiC Timepix3 radiation camera

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