Imaging and spectrometric performance of SiC Timepix3 radiation camera
B. Zaťko,
A. Šagátová,
L. Hrubčín
et al.
Abstract:A Schottky barrier radiation detector and pixel imaging sensor fabricated from epitaxially grown SiC semiconductor were analyzed. The detector was based on an 80 μm thick epitaxial SiC layer. Capacitance-voltage measurement was performed to study the thickness of the space charge region of the detector as a function of applied bias. The results showed that the detector was completely depleted at a reverse bias higher than 300 V. The impurity concentration profile was also calculated, which indicated a net impu… Show more
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