2012
DOI: 10.1109/tns.2012.2197025
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Characterization of Edgeless CdTe Detectors for use in Hard X-Ray Imaging Applications

Abstract: Segmentation of the anode-side of a CdTe diode produces detectors with excellent spatial and energy resolution while maintaining an active area that extends to the detector edge. The CdTe pixel detectors reported have 250 ìm pitch, a detector thicknesses of 1 mm and are bonded to a spectroscopic readout ASIC. The results from an edgeless CdTe detector with indium-diffused anodes, produced via diamond blade segmentation, are compared to those of a CdTe Schottky pixel detector with aluminium anodes and guard ban… Show more

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Cited by 14 publications
(6 citation statements)
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“…The pixels with poorer than average energy resolution are located in two distinct areas, within a few pixels of the physical edge of the crystal and in a diffuse cluster at the centre. The effect of the crystal edges on the detector response has been described in a previous study [26] while the source of the pixels with poor response at the centre of the device forms part of this investigation. The source of the poorer performance pixels at the centre of the detector is of interest as ideally 100 % of pixels would have the excellent energy resolution displayed by the majority of the pixels.…”
Section: Am Detector Characterisationmentioning
confidence: 99%
“…The pixels with poorer than average energy resolution are located in two distinct areas, within a few pixels of the physical edge of the crystal and in a diffuse cluster at the centre. The effect of the crystal edges on the detector response has been described in a previous study [26] while the source of the pixels with poor response at the centre of the device forms part of this investigation. The source of the poorer performance pixels at the centre of the detector is of interest as ideally 100 % of pixels would have the excellent energy resolution displayed by the majority of the pixels.…”
Section: Am Detector Characterisationmentioning
confidence: 99%
“…Wafer sizes with 100 mm in diameter are commonly available, but crystals larger than 20 mm × 20 mm in size are still expensive [8], causing the crystal-ASIC package (also called hybrids) to be one of the most expensive parts of such an imaging device. Seamless hybrid detector technologies have been developed for larger crystals sizes [9] [10] and are typically done by using Through Silicon Via (TSV) technology to replace the wire bond I/Os of 3-side buttable devices. Fig.…”
mentioning
confidence: 99%
“…(width, height, thickness) is mounted onto a two-stage Peltier thermoelectric cooler that decreases the sensor temperature to reduce thermal noise and enables to increase voltage bias [9]. From the manufacturer portfolio, the detector with a CdTe sensor thickness of 1 mm is the most suitable for the spectrometry of medium energy X-ray photons in the energy range up to 300 keV [10].…”
Section: Jinst 17 P10002mentioning
confidence: 99%
“…Entrance window is made of beryllium alloy of 100 μm thickness. The topside and backside electrodes are made of thin layers of indium anode and platinum cathode producing the Schottky and Ohmic contacts, respectively [8][9][10][11]. The detector can be connected with the measuring computer directly via USB or Ethernet cables.…”
Section: Jinst 17 P10002mentioning
confidence: 99%