Characterization of Deep Levels in SiC by Photoluminescence Spectroscopy and Mapping

Tajima, Michio; Kumagaya, Yoshikazu; Nakata, Takao; Inoue, M.; Nakamura, Arao

doi:10.4028/www.scientific.net/msf.264-268.481

Cited by 8 publications

(3 citation statements)

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“…The sharper 11700 Å low-infrared peak coming from the semi-insulating substrate is similar to that reported by Tajima. 8 Tajima observed this peak only at a below bandgap excitation, which is not the case in our experiments.…”

Section: Discussioncontrasting

confidence: 60%

Vanadium doping of 4H SiC from a solid source: Photoluminescence investigation

Koshka

Mazzola

Yingquan

et al. 2001

Journal of Elec Materi

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Section: Discussioncontrasting

confidence: 60%

Vanadium doping of 4H SiC from a solid source: Photoluminescence investigation

Koshka

Mazzola

Yingquan

et al. 2001

Journal of Elec Materi

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“…It should be pointed out that the actual spatial resolution of mapping is not limited by the beam size but by the diffusion of photo-excited carriers. Visible excitation is useful for the below band-gap excitation for specific deep-level emission [3]. For whole wafer mapping the laser beam was irradiated sideways on the wafer with a beam size of around 100 µm.…”

Section: Pl Mapping At Room Temperaturementioning

confidence: 99%

“…The PL mapping technique has been used extensively for this purpose in various semiconductors [1,2]. However, its defect recognition capability is not necessarily high enough in SiC wafers [3][4][5] compared with other techniques, such as etching/optical microscopy [6], X-ray topography [7], etc. The purpose of this paper is to demonstrate the effectiveness of our newly-developed room-temperature PL mapping system for practical detection of structural defects.…”

Section: Introductionmentioning

confidence: 99%

Characterization of SiC Wafers by Photoluminescence Mapping

Tajima

Higashi

Hayashi³

et al. 2006

MSF

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The effectiveness of room-temperature photoluminescence (PL) mapping was demonstrated for nondestructive detection of structural defects, such as dislocations, micropipes and stacking faults, in SiC wafers. PL spectra of bulk wafers were dominated by deep-level emissions due to Si vacancies, vanadium and undefined centers like UD-1 at room temperature, while those from epitaxial wafers involved near band-edge emission. We developed a whole-wafer PL intensity mapping system with a capability of zooming in on the area of interest with a spatial resolution as high as 1 μm, and showed that the mapping patterns agree well with the etch-pit patterns originating from the structural defects both on a wafer scale and on a microscopic scale. The intensity contrast around the defects varied depending on the emission band, suggesting differences in their interactions with impurities and point defects.

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Fundamental Aspects of Si C

Choyke

Devaty

2013

Materials Science and Technology

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The sections in this article are Introduction Polytypism Crystallography Inequivalent Sites Some Properties of Simple Polytypes Origin of Polytypism Band Structure The General Picture The Conduction Band Edges The Valence Band Edges Phonons Calculations of Phonon Dispersion Relations Infrared Transmission and Reflection Phonon Frequencies Measured by Low Temperature Photoluminescence ( LTPL ) and the k ‐Space Locations of Conduction Band Minima First and Second Order R aman Scattering R aman Scattering from Free Carriers Intrinsic Excitons Shallow Centers Shallow Donors: Nitrogen and Phosphorus Nitrogen Phosphorus Acceptors Deep Centers Transition Metals Titanium Vanadium Chromium Molybdenum Scandium Manganese Rare Earths: Erbium Intrinsic Defects Deep Level Transient Spectroscopy ( DLTS ) Electron Spin Resonance and Positron Annihilation Low Temperature Photoluminescence Transport Properties Carrier Effective Masses Mobilities and Mobility Anisotropy Hall Scattering Factor Time Resolved Measurements and Lifetimes Acknowledgements

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Characterization of Deep Levels in SiC by Photoluminescence Spectroscopy and Mapping

Cited by 8 publications

References 0 publications

Vanadium doping of 4H SiC from a solid source: Photoluminescence investigation

Vanadium doping of 4H SiC from a solid source: Photoluminescence investigation

Characterization of SiC Wafers by Photoluminescence Mapping

Fundamental Aspects of Si C

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