Fundamental Aspects of Si C

Abstract

The sections in this article are Introduction Polytypism Crystallography Inequivalent Sites Some Properties of Simple Polytypes Origin of Polytypism Band Structure The General Picture The Conduction Band Edges The Valence Band Edges Phonons Calculations of Phonon Dispersion Relations Infrared Transmission and Reflection Phonon Frequencies Measured by Low Temperature Photoluminescence ( LTPL ) and the k ‐Space Locations of Conduction Band Minima First and Second Order R aman Scattering R aman Scattering from Free Carriers Intrinsic Excitons Shallow Centers Shallow Donors: Nitrogen and Phosphorus Nitrogen Phosphorus Acceptors Deep Centers Transition Metals Titanium Vanadium Chromium Molybdenum Scandium Manganese Rare Earths: Erbium Intrinsic Defects Deep Level Transient Spectroscopy ( DLTS ) Electron Spin Resonance and Positron Annihilation Low Temperature Photoluminescence Transport Properties Carrier Effective Masses Mobilities and Mobility Anisotropy Hall Scattering Factor Time Resolved Measurements and Lifetimes Acknowledgements