Characterization of crystallinity of Ge1−xSnx epitaxial layers grown using metal-organic chemical vapor deposition

Growth and applications of GeSn-related group-IV semiconductor materials

“…They examined the growth of Ge 1− x Sn x layers on a Si substrate using the MOCVD method at 350–380 °C. Recently, we demonstrated the epitaxial growth of Ge 1− x Sn x layers on a Ge(001) substrate using the MOCVD method [50, 51]. In our study, we used the precursors of TBGe and tri-butyl-vinyl-tin, t-C 2 H 9 SnCH 2 .…”

“…A Ge 1− x Sn x epitaxial layer with an Sn content of 5.1% was achieved using MOCVD at 300 °C. The surface morphology and crystalline structures of Ge 1− x Sn x epitaxial layers prepared using the MOCVD method are superior compared to those of Ge 1− x Sn x layers grown with the MBE method [51]. In the Ge 1− x Sn x layer prepared with low-temperature MBE growth, we can often see inhomogeneous contrast in the cross-sectional TEM observation, which indicates the fluctuation of the lattice constant of Ge 1− x Sn x layer.…”

Characterization of Shallow- and Deep-Level Defects in Undoped Ge1−xSnxEpitaxial Layers by Electrical Measurements

“…The details of these layers were reported in a previous paper, where we confirmed the good crystallinity of the Ge 1−x Sn x epitaxial layers and Ge 1−x Sn x epitaxial layers prepared by the MBE method. 32 Figure 2a shows the (J-V) characteristics of Ge 1−x Sn x /Ge pn diodes with various Sn contents at a measurement temperature of 300 K. We estimated the pn junction characteristics using the following equation for forward bias current density J F :…”

Selective growth of Ge1−xSnxepitaxial layer on patterned SiO2/Si substrate by metal–organic chemical vapor deposition

“…The growth of the Ge layer without a Sn precursor was also examined for comparison. 26,27) The Ge and Sn precursors used in this MOCVD growth were t-BGe and TBVSn, respectively. The flow rates of t-BGe and TBVSn were 1.2 and 3.7 × 10 −3 sccm, respectively.…”

“…Recently, the epitaxial growth of Ge and Ge 1−x Sn x layers with metal-organic (MO) precursors has been reported. [22][23][24][25][26][27][28][29][30][31][32] MO precursors can be generally easily handled because they are safer than hydrogen precursors, and they also hardly cause corrosion of metals unlike chlorine precursors.…”