Selective growth of Ge_1−xSn_xepitaxial layer on patterned SiO₂/Si substrate by metal–organic chemical vapor deposition

Abstract

We have investigated the selective growth of a Ge 1%x Sn x epitaxial layer on a line/space-patterned SiO 2 /Si substrate by metal-organic chemical vapor deposition. We examined the behavior of a Sn precursor of tributyl(vinyl)tin (TBVSn) during the growth on Si and SiO 2 substrates and investigated the effect of the Sn precursor on the selective growth. The selective growth of the Ge 1%x Sn x epitaxial layer was performed under various total pressures and growth temperatures of 300 and 350 °C. The selective growth of the Ge 1%x Sn x epitaxial layer on the patterned Si region is achieved at a low total pressure without Ge 1%x Sn x growth on the SiO 2 region. In addition, we found that the Sn content in the Ge 1%x Sn x epitaxial layer increases with width of the SiO 2 region for a fixed Si width even with low total pressure. To control the Sn content in the selective growth of the Ge 1%x Sn x epitaxial layer, it is important to suppress the decomposition and migration of Sn and Ge precursors.

Growth of SiGeSn Thin Films Using Simplified PECVD Reactor towards NIR Sensor Devices

“…SAG is also effective in improving the material quality of the deposited films by lowering threading dislocation densities. 18,19 The selectively grown films were fabricated into test photodiodes and evaluated for electrical performance.…”