Characterization of comet-shaped defects on C-face 4H-SiC epitaxial wafers by electron microscopy

Morphological and microstructural analysis of triangular defects in 4H-SiC homoepitaxial layers

“…This suggests that the structure of this type of triangular defect is consistent with those in literature reports. 28,29 Particles fall down and adhere to the surface of the substrates before or during the epilayer growth process, which creates a large triangular on-axis terrace and can cause anomalous growth of the epilayer and formation of the 3C-SiC inclusion.…”

Fabrication of an ultra‐thick‐oriented 3C‐SiC coating on the inner surface of a graphite tube by high‐frequency induction‐heated halide chemical vapor deposition

“…The shoulder at the low per cm side of the TO peaks and the peaks between the TO and LO (~900/cm) had a large number of defects . Naturally, the stacking sequence of 3C‐SiC unit cells was arranged as ABCABC…, but it transformed into the multiple layer inclusion of other polytypes because of the abundant stacking faults introduced, so that a stacking pattern‐α‐SiC such as ABAB … (2H), ABCBABCB … (4H) occurred . From 200 to 350 mm, two broader features between 200 and 500/cm were also observed in the overlapping of the transverse acoustic (TA) and the longitudinal acoustic (LA) of the pseudo‐α‐SiC, respectively .…”

Effects of thermal, elastic, and surface properties on the stability of SiC polytypes

“…Therefore, we show the difference in the energy-strain curves of 3C and 4H in the main plot. We choose these polytypes because 3C inclusion in 4H-SiC epitaxy is one of the main challenges during growth 7,11,12 . (For a comparison of the energy-strain curves of 3C-2H and 4H-6H, see Ref.…”

“…In the past decades, enormous advancements have been made in the fabrication of commercial substrate and low-defect epitaxial layer growth technology [7][8][9] . The industry standard for SiC epitaxy is growth on 4H-SiC 4 • off-axis Si-face substrates 7,10 at process temperatures of around 1800 K. Defects like stacking faults 11 and triangular defects 12,13 , however, remain a major issue, since these defects limit performance, cause leakage currents, lower the breakdown voltage and increase the onstate resistance [14][15][16] . Stacking faults and triangular defects both consist of a foreign polytype, often 3C, grown into the epitaxial layer during step-flow growth [10][11][12][13][17][18][19] .…”

“…The industry standard for SiC epitaxy is growth on 4H-SiC 4 • off-axis Si-face substrates 7,10 at process temperatures of around 1800 K. Defects like stacking faults 11 and triangular defects 12,13 , however, remain a major issue, since these defects limit performance, cause leakage currents, lower the breakdown voltage and increase the onstate resistance [14][15][16] . Stacking faults and triangular defects both consist of a foreign polytype, often 3C, grown into the epitaxial layer during step-flow growth [10][11][12][13][17][18][19] . Their origin have been attributed to different effects, like step-bunching [20][21][22][23] , downfall particles 12 , and substrate defects 15,17,24 .…”