Characterization of catastrophic optical damage in Al-free InGaAs/InGaP 0.98 μm high-power lasers

Park, K. H.; Lee, J. K.; Jang, Dae-Geun; Cho, H. S.; Park, C. S.; Pyun, Kwang Eui; Jeong, Jaehui; Nahm, Sahn; Jeong, Jichai

doi:10.1063/1.122557

Cited by 33 publications

(6 citation statements)

References 10 publications

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“…12 The result also implies that the epitaxial layer tends to enter a polycrystalline phase after degradation, and the polycrystalline phase of the epitaxial layer corresponds to the DLDs within the cavity. This is consistent with the results obtained from the transmission electron microscopy and electron diffractometry analyses, 13 and the results obtained from deep-etching techniques and focused ion beam microscopy. 14 In addition, we calculated the induced strain and stress based on the shift of the (400) pattern line (the inset of Fig.…”

supporting

confidence: 91%

Spatial hole burning degradation of AlGaAs/GaAs laser diodes

Qiao

Feng

Cong

et al. 2011

Applied Physics Letters

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The degradation of AlGaAs/GaAs laser diodes is studied in detail using laser scanning confocal microscopy, cathodoluminescence images, and x-ray diffraction (XRD) techniques. Our analysis has identified a degradation mechanism that results from the periodic distribution of the carrier density and the near-field intensity originating from periodic spatial hole burning. Based on the XRD measurements, we find that the epitaxial layer enters a polycrystalline phase during degradation due to the dark line defects, and the out-of-plane strain and in-plane compressive stress are induced by degradation.

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supporting

confidence: 91%

Spatial hole burning degradation of AlGaAs/GaAs laser diodes

Qiao

Feng

Cong

et al. 2011

Applied Physics Letters

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“…After removal of the substrate we performed CL imaging and found at these positions very pronounced dark regions starting at the front facets and spreading into the cavity for about 3 lm to 8 lm. These are signatures of propagating melt fronts, as reported for other IR-emitting devices, 8,9 and we calculate their propagation velocities as 1 m/s to 5 m/s, in accordance with Refs. 10 and 11.…”

Section: Structural Analysis and Temperatures During Comdmentioning

confidence: 83%

Imaging Catastrophic Optical Mirror Damage in High-Power Diode Lasers

Ziegler¹,

Tomm²,

Zeimer

et al. 2010

Journal of Elec Materi

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We image catastrophic optical mirror damage (COMD) in red-and infraredemitting high-power broad-area diode lasers by combining highly COMDselective thermography, near-field imaging, scanning electron microscopy, and cathodoluminescence. All techniques exhibit strong correlations in terms of COMD location and strength and allow for an unambiguous decision about COMD occurrence. In particular, temperatures en route to and during COMD are measured, and the concept of a critical facet temperature that induces thermal runaway is supported.

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“…Catastrophic optical mirror damage has been extensively investigated, but very limited reports on bulk damage in broad-area lasers have been presented. Several groups investigated failure modes in broad-area lasers in recent years [13][14][15] and our group recently reported a reliability and failure mode investigation of broad-area lasers using electron beam induced current (EBIC) and high-resolution transmission electron microscope (HR-TEM) techniques [16,17]. In the present study, we report on our investigation of catastrophic facet and bulk degraded broad-area InGaAs strained QW single emitters using various analytical techniques including EBIC, focused ion beam (FIB), and HR-TEM.…”

Section: Introductionmentioning

confidence: 99%

Catastrophic facet and bulk degradation in high power multi-mode InGaAs strained quantum well single emitters

et al. 2009

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Extensive investigations by a number of groups have identified catastrophic sudden degradation as the main failure mode in both single-mode and multi-mode InGaAs-AlGaAs strained quantum well (QW) lasers. Significant progress made in performance characteristics of broad-area InGaAs strained QW single emitters in recent years has led to an optical output power of over 20W and a power conversion efficiency of over 70% under CW operation. However, unlike 980nm single-mode lasers that have shown high reliability operation under a high optical power density of ~50MW/cm 2 , broad-area lasers have not achieved the same level of reliability even under a much lower optical power density of ~5MW/cm 2 . This paper investigates possible mechanisms that prevent broad-area lasers from achieving high reliability operation by performing accelerated lifetests of these devices and in-depth failure mode analyses of degraded devices with various destructive and non-destructive techniques including EBIC, FIB, and HR-TEM techniques. The diode lasers that we have investigated are commercial MOCVD-grown broad-area strained InGaAs single QW lasers at ~975nm. Both passivated and unpassivated broad-area lasers were studied that yielded catastrophic failures at the front facet and also in the bulk. To investigate the role that generation and propagation of defects plays in degradation processes via recombination enhanced defect reaction (REDR), EBIC was employed to study dark line defects in degraded lasers, failed under different stress conditions, and the correlation between DLDs and stress levels is reported. FIB was then employed to prepare TEM samples from the DLD areas for cross-sectional HR-TEM analysis.

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Characterization of catastrophic optical damage in Al-free InGaAs/InGaP 0.98 μm high-power lasers

Cited by 33 publications

References 10 publications

Spatial hole burning degradation of AlGaAs/GaAs laser diodes

Spatial hole burning degradation of AlGaAs/GaAs laser diodes

Imaging Catastrophic Optical Mirror Damage in High-Power Diode Lasers

Catastrophic facet and bulk degradation in high power multi-mode InGaAs strained quantum well single emitters

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