Characterization of Border Trap Density With the Multifrequency Charge Pumping Technique in Dual-Layer Gate Oxide

Son, Younghwan; Park, Sunyoung; Kang, Taewook; Oh, Byoungchan; Shin, Hyungcheol

doi:10.1109/ted.2011.2157931

Cited by 10 publications

(5 citation statements)

References 25 publications

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“…The approach of (3) usually assumes a flat distribution or a U shaped dependence of N ot on energy, increasing toward the conduction and valence band edges of silicon. This appears not to be the most appropriate model for HfO 2 gatestacks, where several peaks of N ot versus energy have been reported [45], so that a more elaborate analysis is required to establish this dependence for the present devices.…”

Section: Discussionmentioning

confidence: 93%

On the Oxide Trap Density and Profiles of 1-nm EOT Metal-Gate Last CMOS Transistors Assessed by Low-Frequency Noise

Simoen

Veloso

Higuchi³

et al. 2013

IEEE Trans. Electron Devices

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The low-frequency noise behavior of replacement metal gate high-k/metal-gate MOSFETs with an equivalent oxide thickness of the SiO 2 /HfO 2 bilayer in the range ∼1 nm has been investigated. It will be shown that both the average trap density and its profile derived from the frequency exponent γ of the flicker noise spectra are mainly determined by the interfacial layer (IL) oxide processing, with a higher trap density corresponding with a thinner chemical oxide, compared with a ≤1-nm thermal SiO 2 IL. The thickness of the HfO 2 layer and the metal gate fill has only a marginal impact on the noise power spectral density. It will also be shown that for the extraction of the trap density profiles from the 1/f γ noise spectra accurate values for the tunneling effective mass and barrier height are required.Index Terms-Flicker noise, high-k (HK) gate dielectrics, low-frequency (LF) noise, oxide trap density, tunneling.

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Section: Discussionmentioning

confidence: 93%

On the Oxide Trap Density and Profiles of 1-nm EOT Metal-Gate Last CMOS Transistors Assessed by Low-Frequency Noise

Simoen

Veloso

Higuchi³

et al. 2013

IEEE Trans. Electron Devices

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“…In fact, more accurate r p (0) should be dependent on temperature involving the multi-phonon process [5,28]. This approximation is based on the well established reports from different research groups regarding the relation between defect depth in the oxide and the CP frequency in thick gate oxide [29][30][31]. Contrarily, Ryan et al [28] conclude that the relationship is more complex than that expected.…”

Section: Extraction Methods Of Border-trap Densitymentioning

confidence: 99%

On the permanent component profiling of the negative bias temperature instability in p-MOSFET devices

Djezzar

Tahi

Benabdelmoumene

et al. 2015

Solid-State Electronics

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“…The test frequency was chosen above 5 kHz for profiling of trap density. In the above-mentioned conventional technique, since the base voltage of the voltage applied to the gate is fixed and the amplitude is gradually increased, it is possible to confirm both the depth and the energy profile [13]. However, since the amplitude is increased, there is a possibility that the data will be distorted due to the increase of the tunneling current in the charge pumping current.…”

Section: Resultsmentioning

confidence: 99%

Characterization of oxide trap density with the charge pumping technique in dual-layer gate oxide

Son

Kim

Kang

2017

IEICE Electron. Express

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In this paper, the simple multi-frequency charge pumping (CP) technique in conjunction with the tunneling model of trapped charges shows for profiling of the near-interface oxide traps in gate metal/high-k dielectric/ SiO2 interfacial layer stack structure. The methodological basis and the accurate model are introduced for analysis of measured multi-frequency CP data in dual-layer gate oxide. The whole models are derived from the fundamental physics and simplified method is introduced for extraction of the trap profile in the stacked gate dielectric from multi-frequency CP curves.

show abstract

Characterization of Border Trap Density With the Multifrequency Charge Pumping Technique in Dual-Layer Gate Oxide

Cited by 10 publications

References 25 publications

On the Oxide Trap Density and Profiles of 1-nm EOT Metal-Gate Last CMOS Transistors Assessed by Low-Frequency Noise

On the Oxide Trap Density and Profiles of 1-nm EOT Metal-Gate Last CMOS Transistors Assessed by Low-Frequency Noise

On the permanent component profiling of the negative bias temperature instability in p-MOSFET devices

Characterization of oxide trap density with the charge pumping technique in dual-layer gate oxide

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