Characterization of bond formation in SiC and Si₃N₄ implanted with Ti, Fe, and Co

Abstract

Ti, Fe, and Co ions were implanted in two ceramics, SiC and Si 3 N 4 , to reach concentrations on the order of 10% over a depth of about 50-60 nm. X-ray absorption spectroscopy was performed at the K edge of the implanted ions to identify their local environment at the end of the implantation process. Ti was found to form Ti-C and Ti-N bonds whereas Co and Fe precipitated and formed clusters in Si 3 N 4 . CoSi was detected in SiC whereas, in the same matrix, Fe clusters coexist with FeSi. A coherent interpretation of these results is given in terms of the heat of reaction for all possible systems. We also successfully interpret in the same way some results found in literature in the case of implanted oxides.

Study by X-ray absorption spectroscopy of Si3N4 films after Cu or Fe implantation and thermal treatment

“…Implantations were carried out at 300 K on the Irma implantor (Chaumont et al, 1981) were chosen so that Cu and Fe stop in the layers; they correspond to a deposited energy about 300 eV/at (Ziegler et al 1986). Some samples implanted with Cu were annealed at 800°C for 1 hour under vacuum, a temperature that allows an increase of the cluster size (Zanghi et al , 2000). X-ray absorption spectroscopy was performed at 300 K at the Si K edge on the SA32 station of the SuperAco ring, on the as-prepared samples, on the implanted and annealed ones.…”

“…This article studies the initial state and the modification of Si 3 N 4 prepared in form of thin amorphous layers submitted to Cu or Fe implantations. Recently, we showed (Zanghi et al, 2000) that Co and Fe implanted in bulk polycrystalline Si 3 N 4 precipitate in form of metallic clusters. The X-ray absorption coefficient measured at the Cu K edge (not shown here) shows the Cu precipitation.…”

Effect of sputtering rate and ion irradiation on the microstructure and magnetic properties of Ni∕Si3N4 multilayers

“…19 In the case of the Co/ AlN multilayer system, Co has Al neighbors and not N ones. This is unexpected from the thermodynamical point of view since the Ni-N bonds are much less favored than the Ni-Si ones.…”

“…The idea is to bring energy to the Ni atoms in a very controlled way, so that previously formed small Ni clusters can experience a ripening process leading to a very progressive growth. 19 Our understanding of this behavior makes it possible to predict Ni precipitation in this matrix. By changing the initial Ni thickness, one can reach model systems with several cluster diameters and intercluster distances where the role of these two parameters on the magnetic behavior can be studied.…”

Microstructural and opto-electrical properties of chromium nitride films implanted with vanadium ions

“…A priori, one expects the formation of either V or Cr precipitation in the form of clusters, or the compound VN, or a solid solution of the type Cr 1−x V x N (25). According to Traverse and co-workers (26,27), the heat of formation of the initial nitride and other possible phases has to be considered when predicting the new final phase(s). Since the heat of formation of VN is more negative than the one of CrN, VN should be formed providing the correct stoichiometry and sufficient mobility are given.…”