Abstract:We report on modifications of 280-nm thin polycrystalline CrN layers caused by vanadium ion implantation. The CrN layers were deposited at 150 • C by d.c. reactive sputtering on Si(100) wafers and then implanted at room temperature with 80-keV V + ions to fluences of 1 × 10 17 and 2 × 10 17 ions/cm 2 . Rutherford backscattering spectroscopy, cross-sectional transmission electron microscopy, and X-ray diffraction were used to characterize changes in the structural properties of the films. Their optical and elec… Show more
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