2016
DOI: 10.1016/j.nima.2016.09.007
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Characterization of AGIPD1.0: The full scale chip

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Cited by 15 publications
(26 citation statements)
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“…The noise measurement of the high gain state is extracted from dark frames taken under experimental conditions (not shown) and typical values for the Equivalent Noise Charge (ENC) are 320 and 240 electrons in CDS gain low or high, respectively. For the other gain states the noise is higher, but still below the Poisson limit (Mezza et al, 2016a).…”
Section: Figurementioning
confidence: 91%
“…The noise measurement of the high gain state is extracted from dark frames taken under experimental conditions (not shown) and typical values for the Equivalent Noise Charge (ENC) are 320 and 240 electrons in CDS gain low or high, respectively. For the other gain states the noise is higher, but still below the Poisson limit (Mezza et al, 2016a).…”
Section: Figurementioning
confidence: 91%
“…13 Low Temperature Co-fired Ceramics 14 AGIPD can also operated at ambient pressure, but coarse vacuum levels are -depending on sensor bias -forbidden by Paschen's law. 15 Printed Circuit Board 16 Field-Programmable Gate Array…”
Section: Agipd Detector Systems At Spb and Midmentioning
confidence: 99%
“…Transfer characteristics of AGIPD, including gain switching[15]. The solid lines are linear fits to the corresponding gain setting.…”
mentioning
confidence: 99%
“…The laser intensities were calibrated by measuring the photo-current from a 320 µm thick planar silicon diode and then converting to equivalent number of 12.4 keV photons per pulse. A detailed introduction to the experimental setup and conversion from laser intensity to photons can be found in [18,20]. Figure 5(a) shows the dynamic range for a specific channel using HG0 and G0.…”
Section: Dynamic Rangementioning
confidence: 99%