A: Chromium compensated GaAs sensors have been characterized using the chargeintegrating readout chip JUNGFRAU. Due to its low noise performance and 75 × 75 µm 2 pixel size, JUNGFRAU enables a precise measurement of the charge (of either polarity) with a high spatial resolution.Several sensor parameters like dark current, noise and spectral performance as well as the charge transport properties of the electrons have been determined. The short lifetime of holes in GaAs:Cr gives rise to an effect where pixels adjacent to a pixel with a photon hit show a strong negative signal when being absorbed close to the readout electrode. This so-called 'crater effect' has been simulated and allows an estimation of the hole lifetime in GaAs:Cr.
Chromium compensated GaAs or GaAs:Cr sensors provided by the Tomsk State University (Russia) were characterized using the low noise, charge integrating readout chip JUNGFRAU with a pixel pitch of 75 × 75 µm2 regarding its application as an X-ray detector at synchrotrons sources or FELs. Sensor properties such as dark current, resistivity, noise performance, spectral resolution capability and charge transport properties were measured and compared with results from a previous batch of GaAs:Cr sensors which were produced from wafers obtained from a different supplier. The properties of the sample from the later batch of sensors from 2017 show a resistivity of 1.69 × 109 Ω/cm, which is 47% higher compared to the previous batch from 2016. Moreover, its noise performance is 14% lower with a value of (101.65 ± 0.04) e- ENC and the resolution of a monochromatic 60 keV photo peak is significantly improved by 38% to a FWHM of 4.3%. Likely, this is due to improvements in charge collection, lower noise, and more homogeneous effective pixel size. In a previous work, a hole lifetime of 1.4 ns for GaAs:Cr sensors was determined for the sensors of the 2016 sensor batch, explaining the so-called “crater effect” which describes the occurrence of negative signals in the pixels around a pixel with a photon hit due to the missing hole contribution to the overall signal causing an incomplete signal induction. In this publication, the “crater effect” is further elaborated by measuring GaAs:Cr sensors using the sensors from 2017. The hole lifetime of these sensors was 2.5 ns. A focused photon beam was used to illuminate well defined positions along the pixels in order to corroborate the findings from the previous work and to further characterize the consequences of the “crater effect” on the detector operation.
Recent advances in segmented low‐gain avalanche detectors (LGADs) make them promising for the position‐sensitive detection of low‐energy X‐ray photons thanks to their internal gain. LGAD microstrip sensors fabricated by Fondazione Bruno Kessler have been investigated using X‐rays with both charge‐integrating and single‐photon‐counting readout chips developed at the Paul Scherrer Institut. In this work it is shown that the charge multiplication occurring in the sensor allows the detection of X‐rays with improved signal‐to‐noise ratio in comparison with standard silicon sensors. The application in the tender X‐ray energy range is demonstrated by the detection of the sulfur Kα and Kβ lines (2.3 and 2.46 keV) in an energy‐dispersive fluorescence spectrometer at the Swiss Light Source. Although further improvements in the segmentation and in the quantum efficiency at low energy are still necessary, this work paves the way for the development of single‐photon‐counting detectors in the soft X‐ray energy range.
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