Characterization of activated non-evaporable porous Ti and Ti–Zr–V getter films by synchrotron radiation photoemission spectroscopy

Li, Chien-Cheng; Huang, Jow Lay; Lin, Ran-Jin; Chen, Chia-Hao; Lii, Ding-Fwu

doi:10.1016/j.tsf.2006.07.052

Cited by 28 publications

(17 citation statements)

References 12 publications

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“…In order to upgrade and sustain the vacuum inside the cavity of vacuum-type devices, non-evaporable getter (NEG) materials, such as titanium or titanium alloys, have been widely used due to their low activation temperature, high chemical activity, large solubility, and high diffusivity for gases [1][2][3][4][5][6][7]. When the NEG materials are exposed to air, their surfaces will be covered by the reactive molecules, such as oxygen, carbon dioxide, etc.…”

Section: Introductionmentioning

confidence: 99%

“…The activation temperature of the NEG can be characterized by the ultimate pressure of the vacuum cavity [1,3] and the fully metallic surface state by surface examination by X-ray photoelectron spectroscopy (XPS) [4,5,7], static secondary ion mass spectroscopy (SSIMS) [4,5], and Auger electron spectroscopy (AES) [2,6]. It is well known that the Ti x Zr y V z alloy with a well-defined composition range has the lowest activation temperature of 180°C with an activation time of 24 h [1][2][3]6].…”

Section: Introductionmentioning

confidence: 99%

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Activation characterization of non-evaporable Ti–Zr–V getter films by synchrotron radiation photoemission spectroscopy

Huang

Lin

et al. 2009

Thin Solid Films

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Activation characterization of non-evaporable Ti–Zr–V getter films by synchrotron radiation photoemission spectroscopy

Huang

Lin

et al. 2009

Thin Solid Films

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“…with the main metals (Ti or Zr) of each NEG upper layer. Indeed, the reduction of the oxides of these elements to their metallic states is a clear indication of NEG activation by demonstrating a clean reactive surface [ 19 , 20 , 21 ]. Furthermore, knowing how the contaminants bound to the getter metal may provide insight into understanding the gettering mechanism and performance.…”

Section: Resultsmentioning

confidence: 99%

Development and Characterization of Non-Evaporable Getter Thin Films with Ru Seeding Layer for MEMS Applications

2018

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Mastering non-evaporable getter (NEG) thin films by elucidating their activation mechanisms and predicting their sorption performances will contribute to facilitating their integration into micro-electro-mechanical systems (MEMS). For this aim, thin film based getters structured in single and multi-metallic layered configurations deposited on silicon substrates such as Ti/Si, Ti/Ru/Si, and Zr/Ti/Ru/Si were investigated. Multilayered NEGs with an inserted Ru seed sub-layer exhibited a lower temperature in priming the activation process and a higher sorption performance compared to the unseeded single Ti/Si NEG. To reveal the gettering processes and mechanisms in the investigated getter structures, thermal activation effect on the getter surface chemical state change was analyzed with in-situ temperature XPS measurements, getter sorption behavior was measured by static pressure method, and getter dynamic sorption performance characteristics was measured by standard conductance (ASTM F798–97) method. The correlation between these measurements allowed elucidating residual gas trapping mechanism and prediction of sorption efficiency based on the getter surface poisoning. The gettering properties were found to be directly dependent on the different changes of the getter surface chemical state generated by the activation process. Thus, it was demonstrated that the improved sorption properties, obtained with Ru sub-layer based multi-layered NEGs, were related to a gettering process mechanism controlled simultaneously by gas adsorption and diffusion effects, contrarily to the single layer Ti/Si NEG structure in which the gettering behavior was controlled sequentially by surface gas adsorption until reaching saturation followed then by bulk diffusion controlled gas sorption process.

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“…The thermal activation process was performed by heating at intervals throughout 120°C, 160°C, 200°C, 250°C and 350°C. The samples were kept at the indicated temperature for 0.5 h and then were cooled down to room temperature [12].…”

Section: Methodsmentioning

confidence: 99%

Oxygen-adsorption characterization of activated non-evaporable Ti–Zr–V getter films by synchrotron radiation photoemission spectroscopy

Huang

Lin

et al. 2007

Thin Solid Films

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Characterization of activated non-evaporable porous Ti and Ti–Zr–V getter films by synchrotron radiation photoemission spectroscopy

Cited by 28 publications

References 12 publications

Activation characterization of non-evaporable Ti–Zr–V getter films by synchrotron radiation photoemission spectroscopy

Activation characterization of non-evaporable Ti–Zr–V getter films by synchrotron radiation photoemission spectroscopy

Development and Characterization of Non-Evaporable Getter Thin Films with Ru Seeding Layer for MEMS Applications

Oxygen-adsorption characterization of activated non-evaporable Ti–Zr–V getter films by synchrotron radiation photoemission spectroscopy

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