Activation characterization of non-evaporable Ti–Zr–V getter films by synchrotron radiation photoemission spectroscopy

Li, Chien-Cheng; Huang, Jow–Lay; Lin, Ran-Jin; Lii, Ding-Fwu; Chen, Chia-Hao

doi:10.1016/j.tsf.2007.06.102

Cited by 14 publications

(11 citation statements)

References 10 publications

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“…In other words, the TiZrV film can be fully activated by heating at 120 • C for a longer time. In a similar manner, the activation temperature for Zr and ZrVHf films were found to be 300 • C and 200 • C. Comparing to reference [19] (TiZrV film activated at 120 • C for 0.5 h), and reference [14] (TiZrV film activated at 150 • C for 1 h), the reduction degree of the TiZrV film found in this work after heating at 120 • C for 0.5 h is to a higher extent.…”

Section: Discussionsupporting

confidence: 74%

“…Efforts [9][10][11][12][13] have been made to reduce the activation temperature; the lowest activation temperature of TiZrV films reported was 150 • C [14]. The activation temperature of the NEG can be characterized by the pressure distribution of the custom-made pumping speed measurement setup [11,15], the ultimate vacuum after activation [16] and the change in valence states by X-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS), low-energy ion scattering (LEIS) and Auger electron spectroscopy (AES) [17][18][19][20][21][22]. The models [23] to evaluate diffusion and solution in the activation process are only applicable to single crystals, hence the search for NEG films of lower activation temperatures is currently posteriori.…”

Section: Introductionmentioning

confidence: 99%

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Activation of Zr, ZrVHf and TiZrV Non-Evaporative Getters Characterized by In Situ Synchrotron Radiation Photoemission Spectroscopy

Yang

Huang

et al. 2021

Applied Sciences

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The activation process of Zr, ZrVHf and TiZrV non-evaporative getter (NEG) thin films, prepared by direct current magnetron sputtering, is investigated by in situ synchrotron radiation photoemission spectroscopy. The activation temperatures of Zr and ZrVHf films are found to be 300 °C and 200 °C, respectively, and the activation temperature of TiZrV film is 120 °C—the lowest activation temperature reported on TiZrV. As the heating temperature increases, the transformation of metal-C bond follows the orders of V–C, Ti–C, Zr–C, Hf–C. It is found that the order of reduction difficulty of the same element oxides, that is, Zr oxide and V oxide in different films follows Zr film > ZrVHf film > TiZrV film. The order of difficulty in the reduction of oxides in the same alloy NEG films follows HfO2 > ZrO2 > TiO2 > V2O5. We propose that the above phenomena can be explained by interstitial diffusion, grain boundary diffusion of residual gas atoms and grain boundary precipitation of V and Ti in the solid solution of the NEG films.

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Section: Discussionsupporting

confidence: 74%

Section: Introductionmentioning

confidence: 99%

Activation of Zr, ZrVHf and TiZrV Non-Evaporative Getters Characterized by In Situ Synchrotron Radiation Photoemission Spectroscopy

Yang

Huang

et al. 2021

Applied Sciences

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“…In the analysis of metal element p or d spectra for the as-received TiZrV NEG surface layer, although Ti and Zr reached their highest oxide states, V 2 O 5 was not the dominant form of V. − Similar results have been observed for TiZrHfV and some ZrV NEG film passivation layers. However, different situations have also been discovered in the study of ZrV NEG films. , In O 1s for the surface layer of different types of NEGs, ,− ,− the signal of hydroxyl groups was observed apart from the strong peak of alloy oxides. The hydroxyl group was also reflected in the metal element p or d spectra, such as Zr 3d ,,, and Ni 2p .…”

Section: Introductionsupporting

confidence: 55%

Formation Mechanism of Passivation Layer under Air Exposure on TiZrV Non-Evaporable Getter Film

Shi,

Wang,

Shi

et al. 2024

J. Phys. Chem. C

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Non-evaporable getter (NEG) films require thermal vacuum activation prior to their use in high vacuum environments. The degree of activation difficulty is influenced by the properties of the passivation layer, but there is limited information about its composition. The purpose of this study is to investigate the formation mechanism and clarify this issue. The film microstructure was investigated by scanning electron microscopy (SEM) and grazing incidence X-ray diffraction (GIXRD). The quantum chemical approach and a single-metal-atom catalytic model were used to calculate the energy barrier for the reactions between the metal atom and the gas molecule, as well as between different hydrocarbon groups. These results facilitated the deconvolution of the X-ray photoelectron spectroscopy (XPS) data and the variation analysis of the energy dispersive spectroscopy (EDS) results. It can be concluded that the presence or absence of hydrogen-proton catalysis can significantly affect the dissociation pathways of carbon dioxide, leading to the formation of different reaction products. In addition, the long-term aluminum foil wrapping and storage can significantly affect the composition of the film passivation layer. This study provides valuable insights not only into the passivation layer formation mechanism, but also into the film gettering mechanism.

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“…The sputtering parameters have significant effects on most other Ti or Zr alloys films microstructures and properties. Previous studies show that the main sputtering parameters of fabricating Ti and Ti-Zr-V films include temperature, sputtering gas pressure and the glancing angle (angle between substrate surface and target surface) [29][30][31][32][33]. However, the correlation of adsorption performance, microstructures and fabrication parameters of Zr-Co-RE films has not been reported before.…”

Section: Introductionmentioning

confidence: 99%

Influence of the sputtering glancing angle on the microstructure and adsorption characteristics of Zr-Co-RE getter films

Zhou¹,

Zhou²,

Liu³

et al. 2020

Mater. Res. Express

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Zr-Co-RE non-evaporable getter films have excellent gas adsorption performance therefore can be used in vacuum sealed electronic devices. The microstructure of getter films has vital effect on adsorption performance. In this paper, Zr-Co-RE films deposited by DC magnetron sputtering at different glancing angles are investigated including microstructures and adsorption characteristics. The surface and cross-sectional morphologies demonstrate loose, porous and columnar-like structure which forms because of low lateral mobility of Zr and Co atoms and shadowing effect of nonperpendicular sputtering. Zr-Co-RE films are amorphous or nanocrystalline structure. The films deposited at 90°glancing angle show large grain size. After Zr-Co-RE films are heated at 350°C for 15 min, the H 2 adsorption capacity and pumping speed at ambient temperature are tested. The films grown at 90°glancing angle have highest initial pumping speed (103.9 ml s −1 cm −2 ), which owe to its more gas diffusion path and active surface, meanwhile, the adsorption capacity is lower than 60°b ecause of difficult and limited diffusion process into getter matrix. The films grown at 60°glancing angle have best adsorption capacity (71.5 Pa.ml cm −2 ) and pumping speed stability. ORCID iDsDetian Li https:/ /orcid.org/0000-0001-6842-6217

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Activation characterization of non-evaporable Ti–Zr–V getter films by synchrotron radiation photoemission spectroscopy

Cited by 14 publications

References 10 publications

Activation of Zr, ZrVHf and TiZrV Non-Evaporative Getters Characterized by In Situ Synchrotron Radiation Photoemission Spectroscopy

Activation of Zr, ZrVHf and TiZrV Non-Evaporative Getters Characterized by In Situ Synchrotron Radiation Photoemission Spectroscopy

Formation Mechanism of Passivation Layer under Air Exposure on TiZrV Non-Evaporable Getter Film

Influence of the sputtering glancing angle on the microstructure and adsorption characteristics of Zr-Co-RE getter films

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