Characterization of a Silicon IGBT and Silicon Carbide MOSFET Cross-Switch Hybrid

A Current-Dependent Switching Strategy for Si/SiC Hybrid Switch-Based Power Converters

“…[5][6][7][8] Different devices can also be parallel connected together to configure a hybrid switch for fully utilizing their respective characteristics, in addition to simply improving the current ratings. [9][10][11][12][13][14][15][16][17][18] One of the earliest hybrid device concepts is the utilization of SiC Schottky barrier diodes (SBDs) as the antiparallel freewheeling diode for Si IGBTs, which has been widely used in industry in the past decade due to the lower diode reverse recovery losses and IGBT turn-on losses compared to employing the conventional Si fast recovery diodes. 9 In, 10,12,13 soft-switching of Si IGBTs with the assistance of parallel-connected Si MOSFETs was investigated for bridge-type power converters, as shown in Fig.…”

“…Recently, with the presence of SiC MOSFETs in the semiconductor device market, hybrid switches based on parallel connections of conventional Si IGBT and SiC MOSFET were also studied. [15][16][17][18] It was shown that this new breed of hybrid switches combine the advantages of Si IGBT and SiC MOSFET at a much lower cost than using pure SiC MOSFETs. However, investigations on developing switching strategies for such Si/SiC hybrid devices with a comprehensive consideration of device losses, reliable operation, and overload capability have been absent from the literature.…”

A 1200 V/200 A Half-Bridge Power Module Based on Si IGBT/SiC MOSFET Hybrid Switch

“…The HySs consisting of the paralleled Si IGBTs and the SiC MOSFETs have been investigated before [11]- [19]. It was demonstrated that the HySs can perform lower switching loss compared to the Si IGBTs and lower cost compared to the SiC MOSFETs [11], [12].…”

Active Gate Delay Time Control of Si/SiC Hybrid Switch for Junction Temperature Balance Over a Wide Power Range

“…However, their significantly higher cost/ampere ($/A) are the major roadblocks for the SiC MOSFET's widespread employment in the commercial mainstream power electronics systems [5][6]. In recent years, the Si/SiC hybrid switch of paralleling a high current Si IGBT and a low current SiC MOSFET was reported to achieve an improved cost/performance tradeoff [7][8][9], which is a promising solution to address the high cost issue of SiC devices [10][11][12][13].…”