Characterization and performance of dielectric diffusion barriers for Cu metallization

Vibrational frequencies of hydrogenated silicon carbonitride: A DFT study

“…Amorphous hydrogenated silicon carbonitride films have been subject of significant research effort over the past decade . Indeed, SiC x N y :H appears as a promising candidate for a wide range of applications including mechanical layer [6,8,10,20,21,23,24], optical layer [1,3,6,9,[18][19][20][21][22]25], low-k dielectric layer [4,5], protective layer [17,20], surface passivation layer for silicon solar cells [2,7,25] and gas separation membranes [13,[26][27][28].…”

“…Amorphous silicon carbonitride films have been obtained through various deposition techniques including both physical vapor deposition (PVD) and chemical vapor deposition (CVD). In particular, different magnetron PVD technologies (DC [17,24] RF [17,18] or high power pulse magnetron sputtering [17]), as well as vapor transport-CVD [16] or different plasma enhanced CVD (PECVD) technologies (low frequency [13,23,[25][26][27], radio frequency [2,[4][5][6][7][8][9]12,14,15], microwave, [1,19,22,28] remote PECVD [3,10,11] or atmospheric pressure PECVD [20,21]), were carefully examined in the literature. Adjusting the deposition conditions (type and concentration of precursor, additional reactants, substrate temperature, type of carrier gas…) allows tuning both the composition and the bonding configuration that greatly affect material properties (electronic properties [22], gas transport [26], …).…”

Pore morphology of low-k SiCxNy films prepared with a cyclic silazane precursor using plasma-enhanced chemical vapor deposition

“…6) showed that the symmetric stretching vibration of the C\ \H 2 bond at 2879 cm −1 [28,29], the asymmetric stretching vibration of the C\ \H 2 bond at 2933 cm −1 [29], the asymmetric stretching vibration of the C\ \H 3 bond at 2962 cm −1 [28], and the bending vibration of Si\ \CH 3 bonds at 1265 cm −1 [10,30] nearly disappeared. Furthermore, the intensities of the N-H bands at 3370 and 1150 cm −1 (1625 cm −1 CN-H) [31,32] decreased. These changes indicated that labile pendent groups, such as the CH x group (x = 2 or 3), bonded to Si and the N\ \H bonds became volatile during the annealing process and generated intrinsic volume.…”

Electrical and Reliability Characteristics of Self-Forming Barrier for CuNd/SiOCH Films in Cu Interconnects

“…For back end of line interconnects in advanced integrated circuits (ICs), copper (Cu) and porous low-dielectric-constant (low-k) materials have been widely used to reduce the resistance-capacitance (RC) time delay and improve operating performance [1][2][3]. To avoid the direct contact of Cu and porous low-k materials, a barrier is required to prevent Cu diffusion into the dielectric film [4,5]. This barrier increases wiring resistance and the increasing magnitude grows as the IC critical dimension continues to shrink.…”