Characterization and optimization of the SiO2/SiC metal-oxide semiconductor interface

SiC/SiO2 Interface Characteristics in N-based 4H-SiC MOS Capacitor Fabricated with PECVD and NO Annealing Processes

“…먼저 F-N터널링에 의한 누설 전류의 식은 다음과 같다. [18] . 건식 산화의 경우 30nm 두께의 SiO2를 형성하기 위해 7500sccm의 O2 환경에서 1080 도, 200분의 조건으로 공정이 진행되었다 [19] .…”

Hysteresis modeling in graphene field effect transistors

“…Gate hysteresis has been observed in a variety of semiconductor materials, such as AlGaAs/GaAs heterostructures, 8,9 AlGaN/GaN MOS heterostructures, 10 and (4,6)H-SiC MOS structures. 11,12 The hysteresis in MOS structures is usually attributed to charge trapping at the semiconductor/dielectric interface, ion drift within the insulator, or space charge effects related to dielectric polarization. Charge trapping generates a hysteresis of anti-clockwise orientation, 9,13 whereas polarization and space charge effects generate a hysteresis with clockwise orientation.…”

Can we make the SiC–SiO2 interface as good as the Si–SiO2 interface?

“…A simple analysis based on the bulk valence and conduction densities of states was employed to estimate the interface-state densities for interfaces between the three most common SiC polytypes ͑3C, 4H, and 6H͒ and SiO 2 . We found that all polytypes had comparable conduction-band interface-state density with silicon dioxide as Si, being higher for the valence band.…”

“…However, the SiC-SiO 2 interface does not have the desirable properties that characterize the Si-SiO 2 interface: the electron mobility in 4H-SiC layers adjacent to the interface is about two orders of magnitude smaller than that in the bulk. [1][2][3][4][5] The density of states ͑DOS͒ at the interface between SiC and SiO 2 is found to be much higher than the corresponding DOS at the Si-SiO 2 interface. [1][2][3][4][5] Moreover, different polytypes show unusual mobilities with respect to their bulk counterparts.…”

“…[1][2][3][4][5] The density of states ͑DOS͒ at the interface between SiC and SiO 2 is found to be much higher than the corresponding DOS at the Si-SiO 2 interface. [1][2][3][4][5] Moreover, different polytypes show unusual mobilities with respect to their bulk counterparts. In particular, the n-channel mobilities for inversion MOSFETs are higher for 6H-SiC than for 4H-SiC, even if 6H-SiC has lower bulk carrier mobility.…”