Hysteresis modeling in graphene field effect transistors

Winters, Michael; Sveinbjörnsson, Einar Ö.; Rorsman, Niklas

doi:10.1063/1.4913209

Cited by 8 publications

(7 citation statements)

References 40 publications

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“…The lack of dispersion may be attributed to the fact that the devices as fabricated are unpassivated, thus precluding interface traps and associated material degradation resulting from dielectric deposition. 24 Responsivity in GND detectors may be interpreted as a consequence of two interacting nonlinearities: the charge neutrality nonlinearity near zero bias and the saturation nonlinearity at high bias ( Fig. 2(a)).…”

mentioning

confidence: 99%

“…The quantity qðÞ in C q represents the density of states in graphene as a function of chemical potential (). [22][23][24] The quasiFermi potential (v) along the length of the nanowire may be ). This results in a current density which varies quadratically with drain bias In this analysis, the chemical potential is assumed to be constant across the width of the nanowire.…”

mentioning

confidence: 99%

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High frequency electromagnetic detection by nonlinear conduction modulation in graphene nanowire diodes

Winters

Thorsell

Strupiński

et al. 2015

Applied Physics Letters

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We present graphene nanowires implemented as dispersion free self switched microwave diode detectors. The microwave properties of the detectors are investigated using vector corrected large signal measurements in order to determine the detector responsivity and noise equivalent power (NEP) as a function of frequency, input power, and device geometry. We identify two distinct conductance nonlinearities which generate detector responsivity: an edge effect nonlinearity near zero bias due to lateral gating of the nanowire structures, and a velocity saturation nonlinearity which generates current compression at high power levels. The scaling study shows that detector responsivity obeys an exponential scaling law with respect to nanowire width, and a peak responsivity (NEP) of 250 V/W (50 pW/ ffiffiffiffiffiffi Hz p ) is observed in detectors of the smallest width. The results are promising as the devices exhibit responsivities which are comparable to state of the art self switched detectors in semiconductor technologies. V C 2015 AIP Publishing LLC.

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confidence: 99%

mentioning

confidence: 99%

High frequency electromagnetic detection by nonlinear conduction modulation in graphene nanowire diodes

Winters

Thorsell

Strupiński

et al. 2015

Applied Physics Letters

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“…Deviations from a frequency‐independent transconductance might appear due to for instance a slow charging of the graphene–electrolyte interface capacitance or a slow filling and depletion of trap states in the graphene environment. [ 28,29 ] In addition, displacement currents through parasitic capacitances at the graphene–electrolyte interface can also result in the attenuation of the signal. [ 30 ] Here, we have characterized the frequency dependence of the magnitude and phase of the g‐SGFETs transfer function.…”

Section: Resultsmentioning

confidence: 99%

Distortion‐Free Sensing of Neural Activity Using Graphene Transistors

Garcia‐Cortadella

Masvidal‐Codina

Cruz

et al. 2020

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Graphene has attracted much attention for its application on sensing due to its high carrier mobility, [1] chemical stability, [2] high stretchability, [3] and transparency. [3][4][5] Many applications have been explored, and more are under study, in which active graphene sensors are used to transduce the physical property of Graphene solution-gated field-effect transistors (g-SGFETs) are promising sensing devices to transduce electrochemical potential signals in an electrolyte bath. However, distortion mechanisms in g-SGFET, which can affect signals of large amplitude or high frequency, have not been evaluated. Here, a detailed characterization and modeling of the harmonic distortion and nonideal frequency response in g-SGFETs is presented. This accurate description of the input-output relation of the g-SGFETs allows to define the voltageand frequency-dependent transfer functions, which can be used to correct distortions in the transduced signals. The effect of signal distortion and its subsequent calibration are shown for different types of electrophysiological signals, spanning from large amplitude and low frequency cortical spreading depression events to low amplitude and high frequency action potentials. The thorough description of the distortion mechanisms presented in this article demonstrates that g-SGFETs can be used as distortion-free signal transducers not only for neural sensing, but also for a broader range of applications in which g-SGFET sensors are used.

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“…3 where experimental data from [5] has been replotted on a semilogarithmic scale. GFET hysteresis effects are well known, and are generally believed to be due to the charging and discharging of dielectric interface states [7][8][9][10].…”

Section: A Leakage Measurementsmentioning

confidence: 99%

Test structures for evaluating Al<inf>2</inf>O<inf>3</inf> dielectrics for graphene field effect transistors on flexible substrates

Yang

Bonmann

Vorobiev

et al. 2018

2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)

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We have developed a test structure for evaluating the quality of Al2O3 gate dielectrics grown on graphene for graphene field effect transistors on flexible substrates. The test structure consists of a metal/dielectric/ graphene stack on a PET substrate and requires only one lithography step for the patterning of the topside metal electrodes. Results from measurements of leakage current, capacitance and loss tangent are presented.

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Hysteresis modeling in graphene field effect transistors

Cited by 8 publications

References 40 publications

High frequency electromagnetic detection by nonlinear conduction modulation in graphene nanowire diodes

High frequency electromagnetic detection by nonlinear conduction modulation in graphene nanowire diodes

Distortion‐Free Sensing of Neural Activity Using Graphene Transistors

Test structures for evaluating Al<inf>2</inf>O<inf>3</inf> dielectrics for graphene field effect transistors on flexible substrates

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