Characterization and modeling of the LPT CSTBT-the 5/sup th/ generation IGBT

Kang, Xiaosong; Lu, L.; Wang, X.; Santi, Enrico; Hudgins, J.L.; Palmer, P.R.; Donlon, J.F.

doi:10.1109/ias.2003.1257658

Cited by 9 publications

(24 citation statements)

References 5 publications

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“…Combining (17), (18) and (19), the solutions on the left-hand side of (11), (12) and (13) are obtained. For even and odd numbers of k, the solutions are given by…”

Section: A N-base Modelingmentioning

confidence: 98%

“…The buffer layer subsystem uses (35), (36), (37), (38) and (19) to calculate I n1 . The subsystem also utilizes (39) and (40) to calculate V j0 and V j1 , respectively.…”

Section: Model Realization In Simulinkmentioning

confidence: 99%

“…The high speed buffer layer IGBT, so far, has received relatively scare attention and only a few compact models are available to date [19]- [23]. Among these works, the models proposed in [19]- [21] focus This work was supported by the academic excellence foundation of BUAA for PHD students.…”

Section: Introductionmentioning

confidence: 97%

“…on characterizing the IGBT turn-off transient while the works [22], [23] are presented for IGBT turn-on modeling. In [19], [20], the PT IGBT model proposed in [6] is directly used to characterize the inductive turn-off behavior of field stop (FS) IGBT and light punch-through (LPT) carrier stored trench bipolar transistor (CSTBT). This fails to consider the fabrication characteristics of FS layer and LPT buffer layer.…”

Section: Introductionmentioning

confidence: 99%

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Modeling Inductive Switching Characteristics of High-Speed Buffer Layer IGBT

Xue

Zhang

2017

IEEE Trans. Power Electron.

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In this study, a physics-based compact model for high speed buffer layer insulated gate bipolar transistor (IGBT) is proposed. The model utilizes the 1-D Fourier-based solution of ambipolar diffusion equation (ADE) implemented in MATLAB and Simulink. Based on the improved understanding on the inductive switching behavior of high speed buffer layer IGBT, the ADE is solved for all injection levels instead of high-level injection only as usually done. Assuming high-level injection condition in the buffer layer, the excess carrier transport, redistribution and recombination in the buffer layer are redescribed. Moreover, some physical characteristics such as the low conductivity of N-base at turn-on transient and free holes appeared in the depletion layer during turn-off process are also considered in the model. Finally, The double-pulse switching tests for a commercial field stop (FS) IGBT and a light punch-through (LPT) carrier stored trench bipolar transistor (CSTBT) are used to validate the proposed model. The simulation results are compared with experiment results and good agreement is obtained.Index Terms-insulated gate bipolar transistor (IGBT), power semiconductor modeling, field stop (FS) IGBT, light punchthrough (LPT) carrier stored trench bipolar transistor (CSTBT), physics-based IGBT model.

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“…Combining (17), (18) and (19), the solutions on the left-hand side of (11), (12) and (13) are obtained. For even and odd numbers of k, the solutions are given by…”

Section: A N-base Modelingmentioning

confidence: 98%

“…The buffer layer subsystem uses (35), (36), (37), (38) and (19) to calculate I n1 . The subsystem also utilizes (39) and (40) to calculate V j0 and V j1 , respectively.…”

Section: Model Realization In Simulinkmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Modeling Inductive Switching Characteristics of High-Speed Buffer Layer IGBT

Xue

Zhang

2017

IEEE Trans. Power Electron.

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“…The first was proposed by Leturcq et al (Leturcq et al, 1997) using a series expansion of ADE based on Fourier transform where carrier distribution is implemented using a circuit with resistors and capacitors (RC network). This technique has been further developed and applied to several semiconductor devices in (Kang et al, 2002;Kang et al, 2003a;Kang et al, 2003b;Palmer et al, 2001;Santi et al, 2001;Wang et al, 2004). The second approach proposed by Araújo et al (Araújo et al, 1997) is based on the ADE solution through a variational formulation and simplex finite elements.…”

Section: Modeling Power Semiconductor Devicesmentioning

confidence: 99%

Parameter Identification of Power Semiconductor Device Models Using Metaheuristics

Chibante¹,

Araújo²,

Carvalho³

2010

Simulated Annealing, Theory With Applications

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The role of power device technology in the electric vehicle powertrain

Robles

Matallana

Aretxabaleta

et al. 2022

Intl J of Energy Research

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Summary In the automotive industry, the design and implementation of power converters and especially inverters, are at a turning point. Silicon (Si) IGBTs are at present the most widely used power semiconductors in most commercial vehicles. However, this trend is beginning to change with the appearance of wide‐bandgap (WBG) devices, particularly silicon carbide (SiC) and gallium nitride (GaN). It is therefore advisable to review their main features and advantages, to update the degree of their market penetration, and to identify the most commonly used alternatives in automotive inverters. In this paper, the aim is therefore to summarize the most relevant characteristics of power inverters, reviewing and providing a global overview of the most outstanding aspects (packages, semiconductor internal structure, stack‐ups, thermal considerations, etc.) of Si, SiC, and GaN power semiconductor technologies, and the degree of their use in electric vehicle powertrains. In addition, the paper also points out the trends that semiconductor technology and next‐generation inverters will be likely to follow, especially when future prospects point to the use of “800 V" battery systems and increased switching frequencies. The internal structure and the characteristics of the power modules are disaggregated, highlighting their thermal and electrical characteristics. In addition, aspects relating to reliability are considered, at both the discrete device and power module level, as well as more general issues that involve the entire propulsion system, such as common‐mode voltage.

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Characterization and modeling of the LPT CSTBT-the 5/sup th/ generation IGBT

Cited by 9 publications

References 5 publications

Modeling Inductive Switching Characteristics of High-Speed Buffer Layer IGBT

Modeling Inductive Switching Characteristics of High-Speed Buffer Layer IGBT

Parameter Identification of Power Semiconductor Device Models Using Metaheuristics

The role of power device technology in the electric vehicle powertrain

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