2004
DOI: 10.1109/ted.2004.829521
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Characterization and Modeling of InGaP HBT Low-Frequency Oscillations

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Cited by 3 publications
(2 citation statements)
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“…Electrothermally induced low-frequency spurious oscillations were reported previously for bipolar devices [17], [18] and explained on the basis of an interplay between slow electrical dynamics (e.g., a bias-tee capacitance) external to the device and the device thermal memory. On the other hand, in the present case, oscillations are related to an energy exchange among the different fingers of the device, as discussed further on.…”
Section: Circuit Interpretation Of Electrothermal Oscillationsmentioning
confidence: 82%
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“…Electrothermally induced low-frequency spurious oscillations were reported previously for bipolar devices [17], [18] and explained on the basis of an interplay between slow electrical dynamics (e.g., a bias-tee capacitance) external to the device and the device thermal memory. On the other hand, in the present case, oscillations are related to an energy exchange among the different fingers of the device, as discussed further on.…”
Section: Circuit Interpretation Of Electrothermal Oscillationsmentioning
confidence: 82%
“…Since we are dealing with a linearized equivalent circuit, we can operate in the frequency domain expressing the small-signal dissipated power (approximated by a first-order Taylor expansion around the dc value) as a function of base current and temperature-rise phasors as (18) where . The relationship between the base-current variation entering each finger is given by…”
Section: Circuit Interpretation Of Electrothermal Oscillationsmentioning
confidence: 99%