2009
DOI: 10.1109/tmtt.2009.2034229
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Assessment of Thermal Instabilities and Oscillations in Multifinger Heterojunction Bipolar Transistors Through a Harmonic-Balance-Based CAD-Oriented Dynamic Stability Analysis Technique

Abstract: We present a novel analysis of thermal instabilities and oscillations in multifinger heterojunction bipolar transistors (HBTs), based on a harmonic-balance computer-aided-design (CAD)-oriented approach to the dynamic stability assessment. The stability analysis is carried out in time-periodic dynamic conditions by calculating the Floquet multipliers of the limit cycle representing the HBT working point. Such a computation is performed directly in the frequency domain, on the basis of the Jacobian of the harmon… Show more

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Cited by 8 publications
(9 citation statements)
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“…The HB determination of the FEs leads to the computation of a large number of eigenvalues, that, in principle, should be distributed in the complex plane in sets characterized by having the same imaginary part [1], [14]; the n − m exponents are chosen by maximizing the accuracy in the associated eigenvectors [16]. The electrothermal system is based on the two-finger HBT model discussed in detail in [2]; each HBT finger is described by a temperature-dependent Gummel-Poon electrical model, and the corresponding temperature increase is calculated as the result of power dissipation on a thermal impedance matrix. Both the electrical and thermal device descriptions take into account capacitive effects, and device physics suggests that the time constants governing the two phenomena (electrical and thermal) are widely separated, since thermal transients are normally much longer than electrical time constants; this should be reflected in the appearance of widely separated FEs.…”
Section: Applicationmentioning
confidence: 99%
See 1 more Smart Citation
“…The HB determination of the FEs leads to the computation of a large number of eigenvalues, that, in principle, should be distributed in the complex plane in sets characterized by having the same imaginary part [1], [14]; the n − m exponents are chosen by maximizing the accuracy in the associated eigenvectors [16]. The electrothermal system is based on the two-finger HBT model discussed in detail in [2]; each HBT finger is described by a temperature-dependent Gummel-Poon electrical model, and the corresponding temperature increase is calculated as the result of power dissipation on a thermal impedance matrix. Both the electrical and thermal device descriptions take into account capacitive effects, and device physics suggests that the time constants governing the two phenomena (electrical and thermal) are widely separated, since thermal transients are normally much longer than electrical time constants; this should be reflected in the appearance of widely separated FEs.…”
Section: Applicationmentioning
confidence: 99%
“…Interest in the Floquet theory has been recently revived in the area of analog electronic circuit analysis and design, mainly because of the central role it plays in the assessment of the stability properties of nonlinear circuit periodic limit cycles [1], [2] and of the phase and amplitude perturbations of oscillators [3]- [7]. For lumped circuits, Floquet's theorem for index-1 differential-algebraic equations (DAEs) [8] defines the properties of a small change perturbation of the circuit periodic working point.…”
Section: Introductionmentioning
confidence: 99%
“…Nevertheless, sinceĈ is made of diagonal blocks (deriving from the time-sampling of the elements of C(t)),C T can easily be built from the components ofC avoiding any further calculation [20]. In summary, the Floquet quantities can be calculated as the solution of the generalized eigenvalue problems in (11) and (12), whose matrices correspond to the jacobians of the HB problem defining the limit cycle, and therefore are available as a byproduct of the Newton iterations normally exploited for the determination of x S (t).…”
Section: Previous Workmentioning
confidence: 99%
“…The solution of the generalized eigenproblems (11) and (12) yields n(2N H + 1) FEs (and the corresponding direct and adjoint eigenvectors). In an ideal system, i.e.…”
Section: Previous Workmentioning
confidence: 99%
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