Characterization and fabrication of zinc oxide nanowire devices

Abstract

In this paper, we demonstrate an approach for the local synthesis of ZnO nanowires (ZnO NWs) and the potential for such structures to be incorporated into device applications. Three network ZnO NW devices are fabricated on a chip by using a bottom-up synthesis approach.Microheaters (defined by standard semiconductor processing) are used to synthesize the ZnO NWs under a zinc nitrate (Zn(NO 3 ) 2 ·6H 2 O) and hexamethylenetetramine (HMTA, (CH 2 ) 6 ·N 4 ) solution. By controlling synthesis parameters, varying densities of networked ZnO NWs are locally synthesized on the chip. The fabricated networked ZnO NW devices are then characterized using UV excitation and cyclic voltammetry (CV) experiments to measure their photoresponse and electrochemical properties. The experimental results show that the techniques and material systems presented here have the potential to address interesting device applications using fabrication methods that are fully compatible with standard semiconductor processing.

Zinc oxide nanowire gas sensors: Fabrication, functionalisation and devices

“…65 It has later been found that Si3N4 shows better constraint on vertical nanowire growth than SiO2, and thus a better integrated design has been achieved using Si 3 N 4 . 66 Udrea et al have carried out hydrothermal growth on silicon-on-insulator (SOI) based CMOS pz silicon micro-heaters. After foundry fabrication of SOI…”