Characteristics of ZnO : As/GaN heterojunction diodes obtained by PA-MBE

Przeździecka, E.; Wierzbicka, Aleksandra; Reszka, A.; Gościński, K.; Droba, Anna; Jakieła, R.; Dobosz, D.; Krajewski, T.; Kopalko, K.; Sajkowski, J.M.; Stachowicz, M.; Pietrzyk, M.A.; Kozanecki, A.

doi:10.1088/0022-3727/46/3/035101

Cited by 20 publications

(9 citation statements)

References 36 publications

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“…The detection limit of hydrogen under such measurement conditions provides the level of 10 18 at/cm 3 [76]. Similar parameters are obtained when measuring thin layers grown by molecular beam epitaxy (MBE) method [77] due to the low primary beam current density and thus the correspondingly low sputter rate.…”

Section: Hydrogen Measurement By Simsmentioning

confidence: 53%

The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors

2019

Acta Phys. Pol. A

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The paper addresses the role of ambient elements (H, C, N and O) in the wide-bandgap semiconductor compounds. Their prevalence in the atmosphere imposes limitations not only on the purity of the materials under processing but, also, on the detection and measurement of the content of these species. Specifically, a review of electrical and optical properties, based on the available literature, is presented for: hydrogen in GaN, ZnO and SiC, carbon in GaN and ZnO, nitrogen in ZnO and SiC and oxygen in GaN and SiC. Further, the refinements of the SIMS (Secondary Ions Mass Spectrometry) analytical technique, aiming to improve the sensitivity and detection limit of atmospheric elements, are described in detail. These include the choice of primary beam type and current, type of secondary single or cluster ions, geometry and vacuum conditions. Finally, the evaluated so-called RSF parameters (Relative Sensitivity Factors) are given for each atom-semiconductor pair, converting raw data to the absolute value of concentration.

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Section: Hydrogen Measurement By Simsmentioning

confidence: 53%

The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors

2019

Acta Phys. Pol. A

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“…There is no indication of layer-relaxation because all counts are detected at a Q x values equal to that of the GaN peak and the position of the reciprocal lattice point corresponding to ZnO layer with respect to GaN shows presence of strain in that layer. 11 ZnO nanostructures were grown on these crystalline layers using a hydrothermal technique. 10 Fig.…”

Section: Resultsmentioning

confidence: 99%

Controlled nucleation and growth of nanostructures by employing surface modified GaN based layers/heterostructures as bottom layer

et al. 2014

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Controlled nucleation and growth of Zinc oxide nanorods is achieved on GaN, etched GaN and AlGaN/GaN heterostructure bottom layers grown by a metal organic chemical vapour deposition technique. The effects of the bottom crystalline layers on the structural, morphological and optical properties of the as grown ZnO nanorods have been investigated by high-resolution X-ray diffraction, scanning electron microscopy, photoluminescence and Raman measurements. HRXRD (0002) reciprocal-space mapping (RSMs) studies were performed on GaN and AlGaN/GaN layers before and after the growth of ZnO nanostructures to investigate the impact of strain upon the ZnO layer grown on GaN layers and AlGaN/GaN heterostructures. Raman intensity mapping shows the densely nucleated hexagonal pit like structures for the etched GaN layer, providing an enhanced surface area for primary nucleation suggesting that the growth species prefer to condense on locations with maximum binding energy. The increase in nucleation density for etched GaN layers also result in dense nanorods which exhibit better excitonic emission. Our studies suggest that ZnO nanostructures with improved optical and structural properties can be grown on etched-GaN as well as AlGaN/GaN heterostructures as the bottom layer. It is interesting to observe that the bottom GaN layer can be easily employed to determine the optical quality of ZnO layer. Experimental detailsGaN based epitaxial layers and heterostructures were deposited on c-sapphire substrates by metal organic chemical vapour deposition (MOCVD), Aixtron 200/4 RF-S system. Trimethyl

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“…The value of the donor density in Zn 0.9 Mg 0.1 O equals 10 17 -10 18 cm À3 . 19 Thus, it may be assumed that the depletion region extends on both sides of the p-Si/MgO/n-Zn 0. …”

Section: -2mentioning

confidence: 99%

Deep traps and photo-electric properties of p-Si/MgO/n-Zn1−xMgxO heterojunction

Płaczek‐Popko

Paradowska

Pietrzyk

et al. 2015

Journal of Applied Physics

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In the paper, the photoluminescence (PL) measurements, current-voltage-temperature (I-V-T) measurements, space charge techniques (C-V and deep level transient spectroscopy (DLTS)), and photocurrent spectral characteristics have been applied to investigate defects in p-Si/MgO/ n-Zn 1Àx Mg x O heterojunction (HJ). The HJ structure was grown on p-type Si (111) substrate with resistivity equal to 0.1 X cm by the plasma-assisted molecular beam epitaxy technique. A radiofrequency cell was used for the generation of oxygen plasma. PL spectrum let us determine the Mg content $10%. Besides the excitonic Zn 0.9 Mg 0.1 O line, the PL spectrum also contains green and yellow emission bands indicating the presence of defect states in the investigated structures. I-V measurements reveal the rectifying properties of the HJ and the current thermally activated with a trap with the activation energy equal to 0.42 eV. DLTS studies yield the majority trap of the activation energy 0.42 eV, confirming the result obtained from the I-V measurements. It was found that the defects related to this trap have a point like behaviour. A spectral characteristic of the photocurrent shows that the p-Si/MgO/n-Zn 1Àx Mg x O HJ may be applied as a photodiode operating within the wavelength range of 300 nm-1100 nm. The dark current transport and photocurrent spectrum were explained using the Anderson model of a HJ. V C 2015 AIP Publishing LLC.

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Characteristics of ZnO : As/GaN heterojunction diodes obtained by PA-MBE

Cited by 20 publications

References 36 publications

The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors

The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors

Controlled nucleation and growth of nanostructures by employing surface modified GaN based layers/heterostructures as bottom layer

Deep traps and photo-electric properties of p-Si/MgO/n-Zn1−xMgxO heterojunction

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