Organic/inorganic heterostructures are an emerging and interesting field of research for optoelectronics. In this work, an efficient organic/inorganic hybrid heterojunction between PEDOT:PSS and n-type Silicon has been fabricated for optoelectronic applications. Samples with varying thickness of PEDOT:PSS were prepared by spin coating technique and the electrical conductivity of organic layers was modified using DMSO as additive. Post fabrication, the hybrid heterostructures were treated with HNO 3 vapor so as to enhance the conductivity of the organic layer. Surface treatment with HNO 3 was found to lower the roughness of the organic layer and enhance the transparency of the layer. I-V characteristics reveal optimized behavior of HNO 3 treated PEDOT:PSS layer with a low Ideality factor (n~3.2) and a barrier height (Φ B ) of 0.8 eV. The findings of the study provide a promising efficient method to enhance the electrical and device properties of PEDOT:PSS/n-Si heterostructures for optoelectronic applications.

Cost effectiveness and reducing the energy and time consumption are crucial factors of concern while material preparation for device fabrication is considered. Here a simple electro chemical reductive method of self-doping is proved for first time to achieve efficient ultrafast (5 s) low temperature (15 °C) crystallization of well aligned TiO 2 nanotubes (TONT). Moreover, the so prepared self-doped TONTs are demonstrated to exhibit superior photocatalytic performance over the undoped in the degradation of the organic pollutant methylene blue. The effect is correlated with the tailoring of the crystallinity and red shift in band gap on self-doping due to the introduction of Ti 3+ ions and oxygen vacancies.

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