Characteristics of polysilicon contacted shallow junction diode formed with a stacked-amorphous-silicon film

Wu, Shye Lin; Lee, Chien‐Liang; Lei, Tan Fu; Chang, H.-C.

doi:10.1109/16.277336

Cited by 9 publications

(2 citation statements)

References 20 publications

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“…Also the boron penetration induced negative oxide charge generation can be reduced [7], [18], as shown in Fig. 2(b dielectric breakdown field [5], [15]. Fig.…”

Section: B Electrical Characteristics Of the P+ Sas And Adp Gate Capmentioning

confidence: 78%

Suppression of the boron penetration induced dielectric degradation by using a stacked-amorphous-silicon film as the gate structure for pMOSFET

Lee

Lei

1996

IEEE Trans. Electron Devices

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This work proposes a stacked-amorphous-silicon (SAS) film as the gate structure of the p+ poly-Si gate pMOSFET to suppress boron penetration into the thin gate oxide. Due to the stacked structure, a large amount of boron and fluorine piled up at the stacked-Si layer boundaries and at the poly-SilSiO2 interface during the annealing process, thus the penetration of boron and fluorine into the thin gate oxide is greatly reduced. Although the grain size of the SAS film is smaller than that of the as deposited polysilicon (ADP) film, the boron penetration can be suppressed even when the annealing temperature is higher than 950°C. In addition, the mobile ion contamination can be significantly reduced by using this SAS gate structure. This results in the SAS gate capacitor having a smaller flat-band voltage shift, a less charge trapping and interface state generation rate, and a larger charge-to-breakdown than the ADP gate capacitor. Also the Si/SiOz interface of the p+ SAS gate capacitor is much smoother than that of the p+ SAS gate capacitor.

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“…Also the boron penetration induced negative oxide charge generation can be reduced [7], [18], as shown in Fig. 2(b dielectric breakdown field [5], [15]. Fig.…”

Section: B Electrical Characteristics Of the P+ Sas And Adp Gate Capmentioning

confidence: 78%

Suppression of the boron penetration induced dielectric degradation by using a stacked-amorphous-silicon film as the gate structure for pMOSFET

Lee

Lei

1996

IEEE Trans. Electron Devices

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“…For the single-layer structure, undoped amorphous silicon film with a thickness of 400 nm was deposited in a low-pressure chemical vapor deposition (LPCVD) reactor by pyrolysis of silane at 550 C under a pressure of 100 mTorr. For the four-layer structure, four layers of amorphous silicon films (each layer is with a thickness of 100 nm) were deposited under typical condi- tions 14,15) sequentially. Note that, during the deposition of two consecutive layers, the LPCVD reactor was purged with nitrogen for 10 min.…”

Section: Methodsmentioning

confidence: 99%

Hydrogen and Oxygen Plasma Effects on Undoped and n–p Compensation-doped Single- and Multilayer Polycrystalline Silicon Resistor Films

Liou

Chang

Wang

2005

Jpn. J. Appl. Phys.

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In this study, we investigate hydrogen and oxygen plasma effects on undoped and n-p compensation-doped polycrystalline silicon (poly-Si) resistors. The current-voltage (I-V) characteristics, channel resistance (R p ), contact region resistance (R j ), total resistance (R T ¼ R p þ R j ), and activation energy of the poly-Si resistors with different film lengths and passivation layers were measured and analyzed. It is found that the film resistance has been strongly enhanced by either hydrogen or oxygen plasma treatments, which is attributed to the neutralization effect of plasma treatment inside the grain being overridden by the passivation effect at the grain boundary. Moreover, it is seen that both the total resistance and activation energy of undoped intrinsic films are larger than those of n-p compensation-doped films. To realize a high-value poly-Si resistor, a novel multilayer structure is proposed for the first time. Compared with the conventional single-layer structure, it is seen that the relatively smaller grain size in a four-layer structure results in an approximately 25-50% increase in resistance.

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SiGe–Si junctions with boron-doped SiGe films deposited by co-sputtering

Jelenković

Tong

Cheung

et al. 2006

Solid-State Electronics

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Characteristics of polysilicon contacted shallow junction diode formed with a stacked-amorphous-silicon film

Cited by 9 publications

References 20 publications

Suppression of the boron penetration induced dielectric degradation by using a stacked-amorphous-silicon film as the gate structure for pMOSFET

Suppression of the boron penetration induced dielectric degradation by using a stacked-amorphous-silicon film as the gate structure for pMOSFET

Hydrogen and Oxygen Plasma Effects on Undoped and n–p Compensation-doped Single- and Multilayer Polycrystalline Silicon Resistor Films

SiGe–Si junctions with boron-doped SiGe films deposited by co-sputtering

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