SiGe–Si junctions with boron-doped SiGe films deposited by co-sputtering

Jelenković, Emil V.; Tong, Kin‐Fai; Cheung, W.Y.; Wong, S. P.; Shi, Bei; Pang, G.K.H.

doi:10.1016/j.sse.2005.12.013

Cited by 9 publications

(5 citation statements)

References 26 publications

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“…The doped SiGe layer was then patterned by photolithography to form the source/drain regions. Our previous results [10] show that very low resistivity of 8 × 10 −3 cm can be obtained in the doped SiGe film at an annealing temperature of 580 • C. Our current-voltage measurements on SiGe(p + )-crystalline Si(n) diode structures also show excellent rectifying properties with very good ideality factor and leakage current [11].…”

Section: Methodssupporting

confidence: 63%

Polysilicon thin film transistors using sputtered HfO₂ gate dielectric and SiGe source/drain

Tong

Jelenković

Liu

et al. 2007

Semicond. Sci. Technol.

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We have fabricated polysilicon thin film transistors (TFTs) using sputtered HfO 2 gate dielectric and SiGe as source/drain. The polysilicon film is formed by low temperature furnace recrystallization of amorphous silicon. The effective dielectric constant of the HfO 2 in the TFTs is 17.7, and the transconductance of the TFTs is about 4.5 times that of those using SiO 2 as gate dielectric. The use of SiGe as source/drain requires a lower thermal budget than the conventional technique of impurity implantation in the polysilicon film.

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Section: Methodssupporting

confidence: 63%

Polysilicon thin film transistors using sputtered HfO₂ gate dielectric and SiGe source/drain

Tong

Jelenković

Liu

et al. 2007

Semicond. Sci. Technol.

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“…Nevertheless, doping is particularly difficult when the material is crystalline, given that it is usually crystallized at high temperatures. Si x Ge 1−x films grown by different techniques, such as low-pressure chemical vapor deposition (LPCVD) or sputtering, turn out to be amorphous unless the deposition itself is performed at very high temperatures [110][111][112]. Certainly, amorphous SiGe layers are not an option to be used as thermoelectric materials, given their low Seebeck and low electrical conductivity.…”

Section: Thin Films: Improvement Of the Thermoelectric Performance Thmentioning

confidence: 99%

Silicon‐Germanium (SiGe) Nanostructures for Thermoelectric Devices: Recent Advances and New Approaches to High Thermoelectric Efficiency

Taborda¹,

Caballero‐Calero²,

MarisolMartín‐González³

2017

New Research on Silicon - Structure, Properties, Technology

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Silicon and germanium present distinct and interesting transport properties. However, composites made of silicon-germanium (SiGe) have resulted in a breakthrough in terms of their transport properties. Currently, these alloys are used in different applications, such as microelectronic devices and integrated circuits, photovoltaic cells, and thermoelectric applications. With respect to thermoelectricity, in the last decades, Si 0.8 Ge 0.2 has attracted significant attention as an energy harvesting material, for powering space applications and other industrial applications. This chapter focuses on the recent advances and new approaches in silicon-germanium (Si 1−x Ge x) nanostructures for thermoelectric devices with high thermoelectric efficiency obtained through magnetron sputtering.

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“…Whereas Si x Ge 1−x can be easily p or n-type doped as an amorphous material grown at room temperature, the control of the doping is particularly difficult when it is crystallized at high temperatures. Si x Ge 1−x films can be grown by different techniques, such as low pressure chemical vapour deposition (LPCVD) or sputtering, which turns out to produce amorphous Si x Ge 1−x unless deposition is performed at very high temperatures [5][6][7]. The main challenge faced in the use of Si x Ge 1−x alloys is associated with the growth of highquality, highly crystalline, low-cost and appropriately doped films, which must be overcome in order to use these materials in large scale practical applications.…”

Section: Introductionmentioning

confidence: 99%

Low thermal conductivity and improved thermoelectric performance of nanocrystalline silicon germanium films by sputtering

Taborda¹,

Romero²,

Mayor³

et al. 2016

Nanotechnology

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Si x Ge1-x alloys are well-known thermoelectric materials with a high figure of merit at high temperatures. In this work, metal-induced crystallization (MIC) has been used to grow Si0.8Ge0.2 films that present improved thermoelectric performance (zT = 5.6 × 10(-4) at room temperature)--according to previously reported values on films--with a relatively large power factor (σ · S (2) = 16 μW · m(-1) · K(-2)). More importantly, a reduction in the thermal conductivity at room temperature (κ = 1.13 ± 0.12 W · m(-1) · K(-1)) compared to other Si-Ge films (∼3 W · m(-1) · K(-1)) has been found. Whereas the usual crystallization of amorphous SiGe (a-SiGe) is achieved at high temperatures and for long times, which triggers dopant loss, MIC reduces the crystallization temperature and the heating time. The associated dopant loss is thus avoided, resulting in a nanostructuration of the film. Using this method, we obtained Si0.8Ge0.2 films (grown by DC plasma sputtering) with appropriate compositional and structural properties. Different thermal treatments were tested in situ (by heating the sample inside the deposition chamber) and ex situ (annealed in an external furnace with controlled conditions). From the studies of the films by: x-ray diffraction (XRD), synchrotron radiation grazing incidence x-ray diffraction (SR-GIXRD), micro Raman, scanning electron microscopy (SEM), x-ray photoemission spectroscopy (XPS), Hall effect, Seebeck coefficient, electrical and thermal conductivity measurements, we observed that the in situ films at 500 °C presented the best zT values with no gold contamination.

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SiGe–Si junctions with boron-doped SiGe films deposited by co-sputtering

Cited by 9 publications

References 26 publications

Polysilicon thin film transistors using sputtered HfO₂ gate dielectric and SiGe source/drain

Polysilicon thin film transistors using sputtered HfO₂ gate dielectric and SiGe source/drain

Silicon‐Germanium (SiGe) Nanostructures for Thermoelectric Devices: Recent Advances and New Approaches to High Thermoelectric Efficiency

Low thermal conductivity and improved thermoelectric performance of nanocrystalline silicon germanium films by sputtering

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SiGe–Si junctions with boron-doped SiGe films deposited by co-sputtering

Cited by 9 publications

References 26 publications

Polysilicon thin film transistors using sputtered HfO2 gate dielectric and SiGe source/drain

Polysilicon thin film transistors using sputtered HfO2 gate dielectric and SiGe source/drain

Silicon‐Germanium (SiGe) Nanostructures for Thermoelectric Devices: Recent Advances and New Approaches to High Thermoelectric Efficiency

Low thermal conductivity and improved thermoelectric performance of nanocrystalline silicon germanium films by sputtering

Contact Info

Product

Resources

About

Polysilicon thin film transistors using sputtered HfO₂ gate dielectric and SiGe source/drain

Polysilicon thin film transistors using sputtered HfO₂ gate dielectric and SiGe source/drain