Characteristics of phase formation during indium selenides oxidation

Balitskii, O.A.; Berchenko, N. N.; Savchyn, V.; Stakhira, J. M.

doi:10.1016/s0254-0584(00)00235-2

Cited by 35 publications

(33 citation statements)

References 15 publications

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“…b) shows that SnSe oxidation may involve the formation of SnSe 2 , with the selenium content being above the initial level. The same phenomenon was found for InSe . However we must notice that SnSe 2 was not found when we were experimenting with SnSe thermal oxidation over the full temperature range.…”

Section: Pb(sn)–te(se)–o Phase Equilibrium Diagramsmentioning

confidence: 99%

Comparison of oxidation processes in binary selenides and tellurides

Berchenko

Story

Trzyna

et al. 2016

Surface & Interface Analysis

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a To predict the grain boundaries composition of the nanocomposite thermoelectric IV-VI devices the oxidation processes in PbTe, SnTe, PbSe, SnSe and in some their solid solutions were studied. The initial oxidation stages were investigated by applying the potentiostatic anodic scan. The Auger electron spectroscopy, cathodoluminescence and X-ray diffraction were used to characterize the composition of the anodic and thermal oxides films. The obtained results demonstrate that the oxidation processes and the oxide composition are near the same at the substitution in the chalcogen sublattice (Te → Se), but they are strongly changed at the substitution in the metal sublattice (Pb → Sn). Under the same growing conditions, the grain boundaries will consist mainly of an amorphous tin oxide in SnTe and SnSe nanocomposites, and the ternary oxide forms the grain boundaries in PbTe and PbSe nanocomposites. In the solid solutions with the Sn occurrence in the metal sublattice tin oxidation becomes a prevailing process, even in case of low tin content.

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Section: Pb(sn)–te(se)–o Phase Equilibrium Diagramsmentioning

confidence: 99%

Comparison of oxidation processes in binary selenides and tellurides

Berchenko

Story

Trzyna

et al. 2016

Surface & Interface Analysis

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“…Condensed phase equilibrium diagrams were calculated in the same way as for In-Se-O and GaSe-O systems [1,3]. Three indium (In 6 3 .…”

Section: Phase Equilibrium Diagrams and Equilibrium Constants Of Oxidmentioning

confidence: 99%

“…In the case of III-VI compounds, this technique is not very reliable due to the complexity of the sequence of intermediate phases. For example, oxidation of indium and gallium selenides leads to precipitation at the interface boundary both selenates and selenides of the corresponding metals with the higher selenium content [1][2][3][4]. In fact, till now not much attention has been given to the oxidation behaviour of isotypical indium and gallium monosulphides.…”

Section: Introductionmentioning

confidence: 99%

Thermal oxidation of indium and gallium sulphides

Balitskii

Savchyn

2005

Physica B: Condensed Matter

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“…13 On the other hand, oxidation can also be used to tune the photoelectric property of materials 14 and to intentionally design metal oxides with specific morphology. [15][16][17][18][19][20][21][22][23] Understanding the oxidation behaviour can then extend the routes in preserving materials' structural integrity under elevated temperatures.…”

mentioning

confidence: 99%

“…27 Many investigations have been carried out to understand the thermal stability and oxidation behaviour of various bulk indium selenides. 15,16,20,21,[29][30][31][32][33][34] In contrast, however, there are very limited investigations on the thermal stability and oxidation of indium selenide nanostructures. For example, j-In 2 Se 3 nanowires were revealed to be stable up to 500 C by in-situ synchrotron X-ray diffraction (XRD).…”

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confidence: 99%

Thermal stability and oxidation of layer-structured rhombohedral In3Se4 nanostructures

Han

Chen

Yang

et al. 2013

Applied Physics Letters

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The thermal stability and oxidation of layer-structured rhombohedral In3Se4 nanostructures have been investigated. In-situ synchrotron X-ray diffraction in a sealed system reveals that In3Se4 has good thermal stability up to 900 °C. In contrast, In3Se4 has lower thermal stability up to 550 or 200 °C when heated in an atmosphere flushed with Ar or in air, respectively. The degradation mechanism was determined to be the oxidation of In3Se4 by O2 in the heating environment. This research demonstrates how thermal processing conditions can influence the thermal stability of In3Se4, suggesting that appropriate heating environment for preserving its structural integrity is required.

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Characteristics of phase formation during indium selenides oxidation

Cited by 35 publications

References 15 publications

Comparison of oxidation processes in binary selenides and tellurides

Comparison of oxidation processes in binary selenides and tellurides

Thermal oxidation of indium and gallium sulphides

Thermal stability and oxidation of layer-structured rhombohedral In3Se4 nanostructures

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