PbTe and its solid solution (Pb,Cd)Te containing 2% of CdTe and PbTe grown by self-selecting vapour growth technique were investigated by inelastic X-ray scattering using synchrotron radiation. The ID28 beamline at ESRF with the incident photon energy of 17794 eV and the energy resolution of 3 meV was applied for that purpose. The measurements were performed at room temperature along [001]-type high symmetry direction in the Brillouin zone. In spite of a very low energy of phonon branches they can be determined by inelastic X-ray scattering with a high accuracy. The transversal acoustic phonon dispersion obtained by inelastic X-ray scattering corresponds well to those resulting from inelastic neutron scattering measurements and ab initio calculations. Apart from expected structures corresponding to the bulk phonons an additional scattering related to the crystal surface properties was observed in the inelastic X-ray scattering spectra. The analysis performed with the use of secondary ion mass spectroscopy technique demonstrated a presence of a thin oxide layer at sample surfaces.
The 'double Dirac cone' 2D topological interface states found on the (001) faces of topological crystalline insulators such as Pb1−xSnxSe feature degeneracies located away from time reversal invariant momenta, and are a manifestation of both mirror symmetry protection and valley interactions. Similar shifted degeneracies in 1D interface states have been highlighted as a potential basis for a topological transistor, but realizing such a device will require a detailed understanding of the intervalley physics involved. In addition, the operation of this or similar devices outside of ultra-high vacuum will require encapsulation, and the consequences of this for the topological interface state must be understood. Here we address both topics for the case of 2D surface states using angle-resolved photoemission spectroscopy. We examine bulk Pb1−xSnxSe(001) crystals overgrown with PbSe, realizing trivial/topological heterostructures. We demonstrate that the valley interaction that splits the two Dirac cones at eachX is extremely sensitive to atomic-scale details of the surface, exhibiting non-monotonic changes as PbSe deposition proceeds. This includes an apparent total collapse of the splitting for sub-monolayer coverage, eliminating the Lifshitz transition. For a large overlayer thickness we observe quantized PbSe states, possibly reflecting a symmetry confinement mechanism at the buried topological interface.The recent experimental realization of three dimensional topological insulators has triggered an expansive program of research, driven largely by the accessibility and rich physics of the 2D electronic states hosted on their surfaces. 1-5 These states are often said to be protected, referencing two distinct concepts. Firstly, the electrical connection of a band-inverted and normal material is not possible without the existence of interface states that thread the bulk bandgap. Secondly, in many band-inverted materials some kind of symmetry exists that forbids hybridization between these cross-gap interface states, thereby ensuring that they remain metallic. These basic characteristics of topological interface states are dictated solely by considerations of symmetry and bulk bandstructure, and in the sense that these are not easily affected by perturbations at the surface, can be considered robust.However it does not follow that the interface states are immune to surface perturbations. For example, adsorption of non-magnetic impurities on the topological insulator Bi 2 Se 3 surface can dope the surface states. [6][7][8] Similarly, the topological crystalline insulator (TCI) Pb 1−x Sn x Se can be surface doped with Rb or Sn, 9,10 while lattice distortions that disrupt mirror symmetry open a bandgap. 11,12 For both classes of materials, the surface termination is predicted to play an important role in the topological band dispersions. [13][14][15][16] Details of the interface are also important in special cases where two bulk band inversions project to the same point in the surface Brillouin zone (Fig.1a), i.e...
Ferromagnetic semiconductor thin layers of the quaternary (Ga,Mn)(Bi,As) and reference, ternary (Ga,Mn)As compounds, epitaxially grown under either compressive or tensile strain, have been characterized from a perspective of structural and magnetization homogeneity. The quality and composition of the layers have been confirmed by secondary-ion mass spectrometry (SIMS). A thorough evaluation of the magnetic properties as a function of temperature and applied magnetic field has been performed by means of SQUID magnetometry and low-energy muon spin relaxation (µSR) spectroscopy, which enables studying local (on the nanometer scale) magnetic properties of the layers. The results testify that the ferromagnetic order builds up almost homogeneously below the Curie temperature in the full volume fraction of both the (Ga,Mn)As and (Ga,Mn)(Bi,As) layers. Incorporation of a small amount of heavy Bi atoms into (Ga,Mn)As, which distinctly enhances the strength of spin-orbit coupling in the quaternary (Ga,Mn)(Bi,As) layers, does not deteriorate noticeably their magnetic properties.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.