Evidence for the homogeneous ferromagnetic phase in (Ga,Mn)(Bi,As) epitaxial layers from muon spin relaxation spectroscopy

Levchenko, K.; Prokscha, T.; Sadowski, J.; Radelytskyi, I.; Jakieła, R.; Trzyna, M.; Andrearczyk, T.; Figielski, T.; Wosiński, T.

doi:10.1038/s41598-019-40309-y

Cited by 8 publications

(8 citation statements)

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“…In this article, we focus on (In,Ga,Mn)As offering additional degrees of freedom: The ability of the parent compound (Ga,Mn)As to form quaternary (Ga,Mn)(Bi,As), (In,Ga,Mn)As, and pentanary (In,Ga,Mn)(Bi,As) compounds with a high structural perfection [24,25] offers a complementary experimental path to pinpoint the origin of ferromagnetism. The multicomponent compounds preserve ferromagnetism with the relatively high Curie temperature of (Ga,Mn)As, while enabling a substantial band structure modification (by a replacement of As by Bi) and creation of local strain (by a replacement of Ga by In).…”

Section: Introductionmentioning

confidence: 99%

Site-specific atomic order and band structure tailoring in the diluted magnetic semiconductor (In,Ga,Mn)As

et al. 2021

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Diluted ferromagnetic semiconductors combining ferromagnetic and semiconducting properties in one material provide numerous new functionalities, attractive for basic studies and potentially useful for novel device applications. The tailoring of the electronic structure in analogy to conventional semiconductors has yet to be explored. Here, we demonstrate the conservation of broken inversion symmetry and band structure tailoring for high-quality molecular-beam-epitaxy-grown (In,Ga,Mn)As films with 3% In plus 2.5% or 5.6% Mn using hard-x-ray photoelectron diffraction (hXPD) and momentum microscopy. Photon energies of 3-5 keV ensure that the results are not corrupted by surface effects, which are known to be strong in semiconductors. The missing inversion center of the GaAs host lattice leads to fingerprint-like hXPD signatures of As and Ga sites. For both concentrations, Mn predominantly occupies Ga substitutional sites. Momentum microscopy reveals a shift of the chemical potential with increasing Mn doping and a highly dispersing band, crossing the Fermi level for high Mn concentration. The Mn doping induces a pronounced modification of the spin-orbit split-off band.

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Section: Introductionmentioning

confidence: 99%

Site-specific atomic order and band structure tailoring in the diluted magnetic semiconductor (In,Ga,Mn)As

et al. 2021

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“…Similar improvement was also established for the (Ga,Mn)(Bi,As) layers [ 1 ]. The in-depth composition of the annealed layers was analysed with secondary-ion mass spectrometry (SIMS) and shown elsewhere [ 2 ]. The high crystalline quality of the layers and sharp interfaces with the substrate were confirmed by means of high-resolution X-ray diffraction (XRD) and transmission electron microscopy (TEM) methods [ 8 ].…”

Section: Methodsmentioning

confidence: 99%

“…The magnetic properties of the investigated layers were examined by means of superconducting quantum interference device (SQUID) magnetometry [ 2 ]. The incorporation of Bi into the (Ga,Mn)As layer resulted in a distinct broadening of its magnetization hysteresis loops and a decrease in the Curie temperature, which was about 90 K in the (Ga,Mn)(Bi,As) layer and 105 K in the reference (Ga,Mn)As one [ 2 ].…”

Section: Methodsmentioning

confidence: 99%

“…In the quest for more efficient spintronic materials, which are both useful for spintronic applications and interesting for physical phenomena investigations, we have focused on the quaternary (Ga,Mn)(Bi,As) compound [1,2]. The incorporation of a small amount of heavy Bi atoms into epitaxial layers of (Ga,Mn)As (regarded as the prototype dilute ferromagnetic semiconductor combining semiconducting properties with magnetism [3]) results in a strong enhancement of the spin-orbit interaction in the valence band, owing to a large relativistic correction to the band structure [4,5].…”

Section: Introductionmentioning

confidence: 99%

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Tunable Planar Hall Effect in (Ga,Mn)(Bi,As) Epitaxial Layers

et al. 2021

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We have thoroughly investigated the planar Hall effect (PHE) in the epitaxial layers of the quaternary compound (Ga,Mn)(Bi,As). The addition of a small amount of heavy Bi atoms to the prototype dilute ferromagnetic semiconductor (Ga,Mn)As enhances significantly the spin–orbit coupling strength in its valence band, which essentially modifies certain magnetoelectric properties of the material. Our investigations demonstrate that an addition of just 1% Bi atomic fraction, substituting As atoms in the (Ga,Mn)As crystal lattice, causes an increase in the PHE magnitude by a factor of 2.5. Moreover, Bi incorporation into the layers strongly enhances their coercive fields and uniaxial magneto-crystalline anisotropy between the in-plane ⟨110⟩ crystallographic directions in the layers grown under a compressive misfit strain. The displayed two-state behaviour of the PHE resistivity at zero magnetic field, which may be tuned by the control of applied field orientation, could be useful for application in spintronic devices, such as nonvolatile memory elements.

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“…[141] Muons are able to move around under the influence of various magnetic fields, for instance, the one induced by neighbouring nuclei. [142] Because of the intrinsic nuclear magnetic moment of lithium, spin flips of muons take place under the influence of the transport of lithium ions. [143] The positrons produced due to the decay of muons are emitted in the muon spin direction.…”

Section: Other Techniquesmentioning

confidence: 99%

Recent Developments of Nanomaterials and Nanostructures for High‐Rate Lithium Ion Batteries

Zhou

et al. 2020

ChemSusChem

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techniques, based on either electrochemical or radiology methodologies, are covered as well. In addition, state-of-the-art research findings are provided to illustrate the effect of nanomaterials and nanostructures in promoting the rate performance of lithium ion batteries. Finally, several challenges and shortcomings of applying nanotechnology in fabricating highrate lithium ion batteries are summarised.

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Evidence for the homogeneous ferromagnetic phase in (Ga,Mn)(Bi,As) epitaxial layers from muon spin relaxation spectroscopy

Cited by 8 publications

References 45 publications

Site-specific atomic order and band structure tailoring in the diluted magnetic semiconductor (In,Ga,Mn)As

Site-specific atomic order and band structure tailoring in the diluted magnetic semiconductor (In,Ga,Mn)As

Tunable Planar Hall Effect in (Ga,Mn)(Bi,As) Epitaxial Layers

Recent Developments of Nanomaterials and Nanostructures for High‐Rate Lithium Ion Batteries

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