Characteristics of p-CuInSe2/n-CdS heterojunction prepared by evaporation of Cu2Se and In2Se3

Hachiuma, Yoshio; Ashida, Atsuchi; Yamamoto, Nobuyuki; Itô, Taichiro; Cho, Yoshio

doi:10.1016/0927-0248(94)90147-3

Cited by 7 publications

(2 citation statements)

References 7 publications

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“…As the substrate temperature is increased the films are found to show as highly preferred orientation along the (1 1 2) direction [14] having lattice constant c/a ratio equal to 2 as the most suitable one for the fabrication of CdS/ CuInSe 2 heterojunction solar cells.…”

Section: Structural Characterizationmentioning

confidence: 99%

Effect of thickness and substrate temperature on structure and optical band gap of hot wall-deposited CuInSe2 polycrystalline thin films

Agilan¹,

Mangalaraj

Narayandass

et al. 2005

Physica B: Condensed Matter

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The copper indium di selenide (CuInSe 2) compound was prepared by direct reaction of high-purity elemental copper, indium and selenium. CuInSe 2 thin films were prepared on to well-cleaned glass substrates by hot wall deposition technique. The X-ray diffraction studies revealed that all the deposited films are polycrystalline in nature, single phase and exhibiting chalcopyrite structure. The crystallites were found to have a preferred orientation along the (1 1 2) direction. The SEM analysis indicated that the films are polycrystalline in nature. The composition of the chemical constituents present in the deposited CuInSe 2 thin films has been determined using energy dispersive X-ray analysis (EDX). Structural parameters of CuInSe 2 thin films coated with higher substrate temperatures were also studied. As the substrate temperature increases the grain size increases. Simultaneous TG-DTA analysis has been done for CuInSe 2 bulk and an endothermic reaction is observed near the melting point of the compound. Optical transmittance spectrum of the hot wall-deposited CuInSe 2 thin films of different thicknesses deposited at three different substrate temperatures were obtained. As the thickness of the film and the substrate temperature increases, the optical band gap decreases. The refractive index of the CuInSe 2 thin films are found decreasing with the incident photon wavelength.

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Section: Structural Characterizationmentioning

confidence: 99%

Effect of thickness and substrate temperature on structure and optical band gap of hot wall-deposited CuInSe2 polycrystalline thin films

Agilan¹,

Mangalaraj

Narayandass

et al. 2005

Physica B: Condensed Matter

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“…However, reports of the electrodeposition of Cu 2 Se have been few, and have generally involved postelectrodeposition annealing or high temperature electrodeposition to produce the compound. CIS has also been formed by sequential evaporation and heat treatment of In 2 Se 3 and Cu 2 Se layers [8][9][10][11][12][13][14][15] . Cu 2 Se has been formed by co-deposition [16][17][18][19] and has also been reported to deposit with CuInSe 2 during electrodeposition 20,21 , and it has also been used as a precursor for the formation of CIS.…”

Section: Introductionmentioning

confidence: 99%

Electrodeposition of CU₂SE thin films by Electrochemical Atomic Layer Epitaxy (EC-ALE).

et al. 2002

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Electrochemical atomic-layer epitaxy (EC-ALE) is an approach to electrodepositing thin-films of compound semiconductors. It takes advantage of underpotential deposition (UPD), deposition of a surface limited amount (a monolayer or less) of an element at a potential less negative than bulk deposition, to form a thin-film of a compound--one atomic layer at a time. Ideally, the 2-D growth mode should promote epitaxial deposition.

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PVD techniques proffering avenues for fabrication of porous tungsten oxide (WO3) thin films: A review

Gupta

Shaik

Kumar

et al. 2022

Materials Science in Semiconductor Processing

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Characteristics of p-CuInSe2/n-CdS heterojunction prepared by evaporation of Cu2Se and In2Se3

Cited by 7 publications

References 7 publications

Effect of thickness and substrate temperature on structure and optical band gap of hot wall-deposited CuInSe2 polycrystalline thin films

Effect of thickness and substrate temperature on structure and optical band gap of hot wall-deposited CuInSe2 polycrystalline thin films

Electrodeposition of CU₂SE thin films by Electrochemical Atomic Layer Epitaxy (EC-ALE).

PVD techniques proffering avenues for fabrication of porous tungsten oxide (WO3) thin films: A review

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Characteristics of p-CuInSe2/n-CdS heterojunction prepared by evaporation of Cu2Se and In2Se3

Cited by 7 publications

References 7 publications

Effect of thickness and substrate temperature on structure and optical band gap of hot wall-deposited CuInSe2 polycrystalline thin films

Effect of thickness and substrate temperature on structure and optical band gap of hot wall-deposited CuInSe2 polycrystalline thin films

Electrodeposition of CU2SE thin films by Electrochemical Atomic Layer Epitaxy (EC-ALE).

PVD techniques proffering avenues for fabrication of porous tungsten oxide (WO3) thin films: A review

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Electrodeposition of CU₂SE thin films by Electrochemical Atomic Layer Epitaxy (EC-ALE).