Characteristics of InGaN‐Based Light‐Emitting Diodes on Patterned Sapphire Substrates with Various Pattern Heights

Yu, Sheng-Fu; Chang, Shoou Jinn; Lin, Ray-Ming; Wu, Hsin-Hung; Hsu, Wen Dung

doi:10.1155/2012/346915

Cited by 11 publications

(7 citation statements)

References 17 publications

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“…Over the past few decades, extensive efforts have been addressed ways to improve light extraction efficiency including chip shaping [6], patterned substrate [7,8], photonic crystal [9,10], surface roughening with micro and nano sized texture [11][12][13], nano-porous p-GaN surface [14,15]. Among them surface texture is most feasible and cost effective method.…”

Section: Introductionmentioning

confidence: 99%

Ni-assisted Fabrication of GaN Based Surface Nano-textured Light Emitting Diodes for Improved Light Output Power

Mustary¹,

Ryu²,

Han³

et al. 2015

JSTS:Journal of Semiconductor Technology and Science

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Abstract-Light enhancement of GaN based light emitting diodes (LEDs) have been investigated by texturing the top p-GaN surface. Nano-textured LEDs have been fabricated using self-assembled Ni nano mask during dry etching process. Experimental results were further compared with simulation data. Three types of LEDs were fabricated: Conventional (planar LED), Surface nano-porous (porous LED) and Surface nano-cluster (cluster LED). Compared to planar LED there were about 100% and 54% enhancement of light output power for porous and cluster LED respectively at an injection current of 20 mA. Moreover, simulation result showed consistency with experimental result. The increased probability of light scattering at the nano-textured GaN-air interface is the major reason for increasing the light extraction efficiency.Index Terms-Light emitting diode, nano porous, nano cluster, rapid thermal annealing (RTA), finite difference time domain (FDTD)

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Section: Introductionmentioning

confidence: 99%

Ni-assisted Fabrication of GaN Based Surface Nano-textured Light Emitting Diodes for Improved Light Output Power

Mustary¹,

Ryu²,

Han³

et al. 2015

JSTS:Journal of Semiconductor Technology and Science

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“…In recent years, there has been a tremendous effort to increase the performance of nitride based LEDs. One of the methods to improve the light output from LEDs is through the growth of LEDs' epitaxial structure on PSS [1]- [6]. Epitaxial structures grown on PSS also have the added advantages of enhancement in the light extraction from LEDs by providing different escape angles to the light, which otherwise would have been trapped in the GaN LED.…”

Section: Introductionmentioning

confidence: 99%

Growth and Fabrication of GaN/InGaN Violet Light Emitting Diode on Patterned Sapphire Substrate

Adhikari¹,

Patra²,

Lunia³

et al. 2014

JAMP

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GaN/InGaN based violet light emitting diodes (LEDs), emitting at 430 nm, have been grown on conventional single side polished (SSP) and patterned sapphire substrates (PSS). Characteristics of the epitaxial wafers and subsequently fabricated LEDs have been analyzed. The photoluminescence (PL) peaks have been observed at 428.1 nm 426.1 nm for the epitaxial layers on SSP and PSS respectively. The PL intensity is 2.9 times higher in the case of PSS. The electroluminescence (EL) peaks have been observed at 430.78 nm and 430.35 nm for the LEDs on SSP and PSS respectively. The light output from LED fabricated on the PSS is 2.15 times higher than that of the LED on SSP at a forward current of 100 mA.

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“…V-shaped defects [5][6][7] readily form at InGaN/GaN quantum wells (QWs) having high indium mole fractions, triggered by threading dislocations in the buffer layer. Several factors can lead to a low-quality InGaN layer, including lattice mismatch between InN and GaN [8], low miscibility of InN [9,10], phase separation [11], indium surface segregation [12], and V-shaped defects [5][6][7]. A growth interruption technique [13,14] can be used to improve the quality of InGaN layers and to enhance the luminescence intensity of LED devices.…”

Section: Introductionmentioning

confidence: 99%

Using Pre-TMIn Treatment to Improve the Optical Properties of Green Light Emitting Diodes

Dai

Wang

et al. 2014

International Journal of Photoenergy

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We investigated the effects of pre-TMIn treatment on the optical properties of green light emitting diodes (LEDs). Although pre-TMIn treatment did not affect the epitaxial structure of quantum wells, it significantly improved the quality of the surface morphology relative to that of the untreated sample. Indium cluster can be seen by high-resolution transmission electron microscopy (HR-TEM), which is the explanation for the red-shift of photoluminescence (PL). Time-resolved photoluminescence measurements indicated that the sample prepared with pre-TMIn treatment had a shorter radiative decay time. As a result, the light output power of the treated green LED was higher than that of the conventional untreated one. Thus, pre-TMIn treatment appears to be a simple and efficient means of improving the performance of green LEDs.

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Characteristics of InGaN‐Based Light‐Emitting Diodes on Patterned Sapphire Substrates with Various Pattern Heights

Cited by 11 publications

References 17 publications

Ni-assisted Fabrication of GaN Based Surface Nano-textured Light Emitting Diodes for Improved Light Output Power

Ni-assisted Fabrication of GaN Based Surface Nano-textured Light Emitting Diodes for Improved Light Output Power

Growth and Fabrication of GaN/InGaN Violet Light Emitting Diode on Patterned Sapphire Substrate

Using Pre-TMIn Treatment to Improve the Optical Properties of Green Light Emitting Diodes

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