Using Pre-TMIn Treatment to Improve the Optical Properties of Green Light Emitting Diodes

Abstract

We investigated the effects of pre-TMIn treatment on the optical properties of green light emitting diodes (LEDs). Although pre-TMIn treatment did not affect the epitaxial structure of quantum wells, it significantly improved the quality of the surface morphology relative to that of the untreated sample. Indium cluster can be seen by high-resolution transmission electron microscopy (HR-TEM), which is the explanation for the red-shift of photoluminescence (PL). Time-resolved photoluminescence measurements indicated that the sample prepared with pre-TMIn treatment had a shorter radiative decay time. As a result, the light output power of the treated green LED was higher than that of the conventional untreated one. Thus, pre-TMIn treatment appears to be a simple and efficient means of improving the performance of green LEDs.

Pre-trimethylindium Flow Treatment of GaInN/GaN Quantum Wells to Suppress Surface Defect Incorporation and Improve Efficiency

“…Several studies have reported that supplying trimethylindium (TMIn) prior to the growth of the GaInN QW (i.e., pre-TMIn flow treatment of the QW) is effective to grow the In-rich MQWs, in which the reduction of strain, In-rich dots, V-pits, and TDs were suggested as the mechanisms. − Considering the role of the UL, that is, the strong affinity between In and the SDs, we strongly speculate that the pre-TMIn flow treatment shows an effect not only on the above-suggested mechanisms but also on the SDs. In brief, we hypothesize that the pre-TMIn flow treatment can be a useful means of suppressing the incorporation of SDs.…”