Characteristics of GaN Metal-Insulator-Semiconductor-Insulator-Metal Ultraviolet Photodiodes Using Al2O3, HfO2, and ZrO2 as Insulators

Seol, Jeong-Hoon; Lee, Gil‐Ho; Hahm, Sung−Ho

doi:10.1109/jsen.2018.2811414

Cited by 7 publications

(2 citation statements)

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“…Nevertheless, the large bandgaps for monolayer ZrO 2 and HfO 2 render their possible application in ultraviolet photodetectors. [47][48][49] Based on the band structures shown in Fig. 2, the effective masses of carriers for 16 MMOs are calculated and summarized in Table 2.…”

Section: Electronic Structures and Carrier Transport Properties Of Momentioning

confidence: 99%

Eighteen functional monolayer metal oxides: wide bandgap semiconductors with superior oxidation resistance and ultrahigh carrier mobility

Guo

Mao

et al. 2019

Nanoscale Horiz.

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Section: Electronic Structures and Carrier Transport Properties Of Momentioning

confidence: 99%

Eighteen functional monolayer metal oxides: wide bandgap semiconductors with superior oxidation resistance and ultrahigh carrier mobility

Guo

Mao

et al. 2019

Nanoscale Horiz.

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“…However, most of the time, it suffers from the drawback of a large leakage current [20]. On the other hand, metal-insulator semiconductor (MIS)/metaloxide semiconductor (MOS) type structures can minimize leakage current and metal interdiffusion in the semiconductor, thereby enhancing photodetection capabilities by incorporating an insulating/oxide layer of SiO 2 [21], Al 2 O 3 [22], MoO 3 and V 2 O 5 [23], etc between the metal and substrate. However, the mentioned oxides are low-k dielectric materials which give limitations to the performance of MOS type UV PDs.…”

Section: Introductionmentioning

confidence: 99%

Fast switching characteristics of (111) oriented cerium oxide thin film-based metal-oxide semiconductor UV photodetector

Devi

Ngangbam

Singh

2020

Semicond. Sci. Technol.

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This work presents the studies of cerium oxide (CeO2) thin films (TFs) with different thicknesses on Si substrates using the electron beam evaporation method for photodetector (PD) application in the UV region. The effect of thickness on the structural, morphological, and optoelectronic properties of the TF was comprehensively studied. The structure and crystallinity of the samples were characterized by x-ray diffraction and all TFs showed highly preferred orientation along the (111) plane. The crystallinity and structural parameters like crystallite size, lattice constant, microstrain and dislocation density were also calculated, and 200 nm film showed the best results. Field emission scanning electron microscopy revealed that the CeO2 TF was smoothly deposited on the substrate. The absorption enhanced with increased thickness and thereby, the bandgap energy decreased to 3.45 eV for 300 nm as compared to 3.65 eV for 100 nm thickness. The electrical performance also proved superior for thicker films with increased photocurrent accompanied by lower dark current. The 200 nm CeO2 TF device showed the fastest switching response with a rise time of 240 ms and a fall time of 152 ms at a bias voltage of −4 V with an on/off ratio of 13.59. Moreover, spectral responses were higher for 200 nm film, thus exhibiting good PD performance. It is believed that this work will be highly useful for use as a sensitive UV PD.

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Structural, optical and photoresponse characteristics of metal-insulator-semiconductor (MIS) type Au/Ni/CeO2/GaN Schottky barrier ultraviolet photodetector

Nallabala¹,

Godavarthi

Kesarla

et al. 2020

Materials Science in Semiconductor Processing

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Characteristics of GaN Metal-Insulator-Semiconductor-Insulator-Metal Ultraviolet Photodiodes Using Al₂O₃, HfO₂, and ZrO₂ as Insulators

Cited by 7 publications

References 31 publications

Eighteen functional monolayer metal oxides: wide bandgap semiconductors with superior oxidation resistance and ultrahigh carrier mobility

Eighteen functional monolayer metal oxides: wide bandgap semiconductors with superior oxidation resistance and ultrahigh carrier mobility

Fast switching characteristics of (111) oriented cerium oxide thin film-based metal-oxide semiconductor UV photodetector

Structural, optical and photoresponse characteristics of metal-insulator-semiconductor (MIS) type Au/Ni/CeO2/GaN Schottky barrier ultraviolet photodetector

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