Structural, optical and photoresponse characteristics of metal-insulator-semiconductor (MIS) type Au/Ni/CeO2/GaN Schottky barrier ultraviolet photodetector

Nallabala, Nanda Kumar Reddy; Godavarthi, Srinivas; Kesarla, Mohan Kumar; Saha, Debabrata; Akkera, Harish Sharma; Guntupalli, Gopi Krishna; Kumar, Suresh; Vattikuti, S.V. Prabhakar

doi:10.1016/j.mssp.2020.105190

Cited by 29 publications

(13 citation statements)

References 58 publications

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“…At present, there are only a few studies focusing on the use of rare-earth oxides in the field of detectors. For example, Nallabala et al 13 prepared MIS-type Au/Ni/CeO 2 /GaN UV photodetectors via metal−organic chemical vapor deposition (MOCVD). The corresponding article was the first report dealing with the effect of the CeO 2 rare-earth interface oxide layer on the performance of Au/Ni/CeO 2 /GaN MIS Schottky diode UV detectors, which had slow response speeds exhibited by the rise and decay times of 2.73 and 5.35 s, respectively.…”

Section: Introductionmentioning

confidence: 99%

Application of Graphene-Combined Rare-Earth Oxide (Sm₂O₃) in Solar-Blind Ultraviolet Photodetection

Huang

Lin

et al. 2023

ACS Appl. Mater. Interfaces

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Rare-earth oxide Sm 2 O 3 is theoretically expected to be used in the preparation of ultraviolet (UV) detectors with low dark currents and high radiation resistance due to its characteristics of a wide bandgap, a high dielectric constant, and high chemical stability. However, certain features that rare-earth oxides possess, such as high resistivity and weak photoelectric response currents, have hindered relevant research on these kinds of materials in the field of UV detection. In this work, a p-Gr/i-Sm 2 O 3 /n-SiC heterojunction photovoltaic solar-blind UV sensor was constructed for the first time. Because of the high mobility of graphene (Gr) and the contribution of double built-in electric fields in the heterojunction, the collection efficiency of photogenerated carriers has been greatly improved, with the typical shortcomings of high resistivity and poor photoelectric response performance of rare-earth oxides having been overcome. This detector has exhibited outstanding performance at 0 V, including a responsivity of 19.8 mA/W and an open-circuit voltage of 0.68 V. Additionally, this detector has a detectivity as high as 1.2 × 10 11 jones, which is at the front position of most ultraviolet detectors. The fabrication of this high-performance Sm 2 O 3based photovoltaic UV detector has broadened the application fields of rare-earth oxide semiconductors. Therefore, this project has important value for future research in relevant fields.

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Section: Introductionmentioning

confidence: 99%

Application of Graphene-Combined Rare-Earth Oxide (Sm₂O₃) in Solar-Blind Ultraviolet Photodetection

Huang

Lin

et al. 2023

ACS Appl. Mater. Interfaces

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“…[ 1 , 2 , 3 ]. Many semiconductor materials, including GaN, TiO 2 , diamond, SiC and ZnO, have been developed and used in UV photodetectors [ 4 , 5 , 6 ]. Among them, ZnO semiconductor materials have attracted much attention due to their wide band gap, excellent chemical and thermal stability and specific electrical and optical properties with a large excitation binding energy (60 meV) [ 7 ].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Performance of UV Photodetector of ZnO Nanorods Decorated with Al Nanoparticles

Shang¹,

Dong²,

Zhang³

et al. 2022

Nanomaterials

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In this work, localized surface plasmon resonance (LSPR) mediated by aluminum nanoparticles (Al NPs) was investigated to enhance the ultraviolet (UV) response of the zinc oxide nanorods (ZnO NRs) grown by the hydrothermal method. The ZnO NRs were characterized by scanning electron microscope, energy dispersive spectroscopy, X-ray diffractometer, Raman spectrometer, ultraviolet-visible spectrophotometer and fluorescence spectrometer. The results show that the morphology and crystalline structure of the ZnO NRs could not be changed before and after decoration with Al NPs, but the absorption rates in the UV range and the photoluminescence (PL) properties were improved. The photo-to-dark current ratio of ZnO NRs with Al NPs was about 447 for 325 nm UV light (5 mW/cm2) at 3.0 V bias, with the sensitivity increasing from 9.5 to 47.8, and the responsivity increasing from 53 to 267 mA/W.

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“…Due to its direct-wide band gap (3.4eV) and high thermal conductivity [3,4], thermal stability, high melting point [5], high electron mobility [6], mechanical hardness, and high breakdown voltage [7], the material gallium nitride (GaN) has become more attractive in recent years. Due to these properties, thin lm has become one of the essential materials of industrial devices.…”

Section: Introductionmentioning

confidence: 99%

“…Because of its extremely broad band gap (3.4 eV) and high heat conductivity, it's a popular semiconductor [4][5][6], high value of melting point, high value of thermal stability [7], high value of the mobility of the electron [8,9], high value of the mechanical hardness, and finallty a high voltage of the breakdown [10], In recent years, the material gallium nitride (GaN) has become more appealing [11,12]. As a result of these characteristics, thin film has become one of the most essential materials in devices manufacturing.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and characterization of GaN/quartz nanostructure using pulsed laser ablation in liquid

Fakhri¹,

Alwahib²,

Salim³

et al. 2022

Phys. Scr.

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The pulsed laser ablation approach was used to synthesize gallium nitride (GaN) nanoparticles (NPs) at six distinct ablation energies. The nanoparticle was deposited on a quartz substrate using the drop cast technique. Two peaks of h-GaN nanostructures are detected in the XRD pattern, at 2θ = 34.64 and 37.98, reflected from the (002) and (100) planes, respectively. The hexagonal crystal nature of GaN is indicated by the morphological features, which is shown in the XRD pattern. The greatest laser power, 2000 mJ, shows a modest emission peaking at 3.34 eV, according to photoluminescence (PL) spectra. At 1400 mJ, the highest emission peak was 3.83 eV. The pulsed laser is used in this study to create nanoparticles with various characteristics.

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Structural, optical and photoresponse characteristics of metal-insulator-semiconductor (MIS) type Au/Ni/CeO2/GaN Schottky barrier ultraviolet photodetector

Cited by 29 publications

References 58 publications

Application of Graphene-Combined Rare-Earth Oxide (Sm₂O₃) in Solar-Blind Ultraviolet Photodetection

Application of Graphene-Combined Rare-Earth Oxide (Sm₂O₃) in Solar-Blind Ultraviolet Photodetection

Fabrication and Performance of UV Photodetector of ZnO Nanorods Decorated with Al Nanoparticles

Synthesis and characterization of GaN/quartz nanostructure using pulsed laser ablation in liquid

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Structural, optical and photoresponse characteristics of metal-insulator-semiconductor (MIS) type Au/Ni/CeO2/GaN Schottky barrier ultraviolet photodetector

Cited by 29 publications

References 58 publications

Application of Graphene-Combined Rare-Earth Oxide (Sm2O3) in Solar-Blind Ultraviolet Photodetection

Application of Graphene-Combined Rare-Earth Oxide (Sm2O3) in Solar-Blind Ultraviolet Photodetection

Fabrication and Performance of UV Photodetector of ZnO Nanorods Decorated with Al Nanoparticles

Synthesis and characterization of GaN/quartz nanostructure using pulsed laser ablation in liquid

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Product

Resources

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Application of Graphene-Combined Rare-Earth Oxide (Sm₂O₃) in Solar-Blind Ultraviolet Photodetection

Application of Graphene-Combined Rare-Earth Oxide (Sm₂O₃) in Solar-Blind Ultraviolet Photodetection