Characterisation of the BaTiO3/p-Si interface and applications

The Conductance- and Capacitance-Frequency Characteristics of the Rectifying Junctions Formed by Sublimation of Organic Pyronine-B on p-Type Silicon

“…It has been seen that the interface state density has an exponential rise with bias from the midgap towards the top of the valence band. The relaxation time shows a slow exponential rise with bias from the top of the valence band towards the midgap, as reported by some authors for metal/Schottky diodes (17)(18)(19). Thus, it can be said the relaxation time to be bias-dependent.…”

Electrical properties of the n-ZnO/c-Si heterojunction prepared by chemical spray pyrolysis

“…The pinning effect makes the height of the energy barrier independent of the ZnO work function. As shown in the literature [19], the Fermi energy at metal/n-semiconductor interfaces is often pinned at about E g /3. In the case of Si (E g = 1.12 eV), this corresponds to 0.37 eV above the valence band edge.…”

“…The values obtained are presented in Table 1 for ε r (ZnO) = 8 and ε r (Si) = 12 [19]. The values obtained for N D in n-ZnO:Al 1 at.% (9 × 10 23 m −3 ) Fig.…”

“…The potential barrier at the junction can be measured by small-signal capacitance-voltage (C-V) [19] characteristics. Fig.…”

On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures by using current–voltage (I–V) and admittance spectroscopy methods

“…Therefore, the loss peak is a function of frequency. Furthermore, the peak value depends on capture rate, i.e., on the interface trap level occupancy, which is determined by the applied gate bias voltage [42,43]. The energy position in the band gap of semiconductor can be calculated as where U F is the position of Fermi energy level U F = kT/q ln(N C /N D ).…”