Characterisation of electromagnetic compatibility drifts of nanoscale integrated circuit after accelerated life tests

Microelectronics Reliability

2015

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International audienceCounterfeit integrated circuits become a big challenge for the whole electronic industry. The use of electronic counterfeits can cause reduced performance of circuits, or failure of the whole system. New efficient approaches of counterfeit device detection are always required. Since the electromagnetic emission level of integrated devices depends on various circuit parameters like technology, manufacturing and aging, the electromagnetic emission measurement could be an approach to detect the counterfeit. In this article, the principles of the methodology are explained and two case studies are presented, where three ways of analysis of data are discussed

Section: Case Study I: Distinction Between Components With Technologimentioning

confidence: 99%

“…It depends on numerous circuit parameters such as technology, placement and routing, embedded code, internal filtering, packaging, temperature, aging [8,9]… Any modification of one of these parameters may lead to a significant change of the electromagnetic emission. This principle emerges as a new idea to detect counterfeit ICs [10,11].…”

Section: Introductionmentioning

confidence: 99%

Electronic counterfeit detection based on the measurement of electromagnetic fingerprint

Huang

Microelectronics Reliability

2015

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“…It depends on numerous circuit parameters such as technology, placement and routing, embedded code, internal filtering, packaging, temperature, aging [8] [9]... Any modification of one of these parameters can lead to a significant change of the electromagnetic emission. This principle emerges as a new idea to detect counterfeit ICs [10] [11].…”

Section: Introductionmentioning

confidence: 99%

The detection of counterfeit integrated circuit by the use of electromagnetic fingerprint

Huang

2014 International Symposium on Electromagnetic Compatibility

2014

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“…The drift of the electrical characteristics of semiconductor devices can have direct consequences on integrated circuit electromagnetic emission (EME) and power integrity (PI). Recently, some publications have shown that accelerated aging tests such as high or low temperature operating life, thermal cycling, or electrical overstress induce a significant variation of EME produced by power supply units [4], high side switch devices [5] or I/O buffers [6]. However, these studies do not clarify the origins of EME changes and do not address modeling and prediction issues.…”

Section: Introductionmentioning

confidence: 99%

Characterization and modeling of electrical stresses on digital integrated circuits power integrity and conducted emission

2013 9th International Workshop on Electromagnetic Compatibility of Integrated Circuits (EMC Compo)

2013

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International audienceRecent studies have shown that integrated circuit aging modifies electromagnetic emission significantly. The proposed paper aims at evaluating the impact of aging on the power integrity and the conducted emission of digital integrated circuits, clarifying the origin of electromagnetic emission evolution and proposing a methodology to predict this evolution. On-chip measurements of power supply voltage bounces in a CMOS 90 nm technology test chip and conducted emission measurements are combined with electric stress to characterize the influence of aging. Simulations based on ICEM modeling modified by an empirical coefficient to model the evolution of the emission induced by device aging is proposed and tested