Character of the dependences of non-equilibrium electron and hole lifetimes on the concentration of recombination centres in impurity-type-recombination semiconductors

Drugova, Albina A.; Kholodnov, V. A.

doi:10.1016/0038-1101(94)00154-8

Cited by 23 publications

(5 citation statements)

References 3 publications

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“…The first fast decay step is mainly due to the drift of injected electrons upon constant drain voltage, overcoming the Schottky barriers through thermionic emission . It is believed that the tunneling of electrons from the valence band of MoS 2 to the defect states of BFO for recombination with oxygen vacancies happens in the slow decay step. − The fitting curves of the two decay steps and their corresponding contributions are plotted and analyzed in Figure S8. The increase of carrier density after writing with the −100 V pulse can be estimated to be 1.84 × 10 18 cm –3 by the following equation, which is where Δ n is the change in carrier density, Δ J is the change in diffusion current density, Δ I is the change in drain current, e is the unit charge, μ is the electron mobility, E is the electric field, and S is the cross-sectional area of MoS 2 channel .…”

Section: Resultsmentioning

confidence: 99%

Solid-Ionic Memory in a van der Waals Heterostructure

Chen¹,

Guo

Wang³

et al. 2022

ACS Nano

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Defect states dominate the performance of low-dimensional nanoelectronics, which deteriorate the serviceability of devices in most cases. But in recent years, some intriguing functionalities are discovered by defect engineering. In this work, we demonstrate a bifunctional memory device of a MoS2/BiFeO3/SrTiO3 van der Waals heterostructure, which can be programmed and erased by solely one kind of external stimuli (light or electrical-gate pulse) via engineering of oxygen-vacancy-based solid-ionic gating. The device shows multibit electrical memory capability (>22 bits) with a large linearly tunable dynamic range of 7.1 × 106 (137 dB). Furthermore, the device can be programmed by green- and red-light illuminations and then erased by UV light pulses. Besides, the photoresponse under red-light illumination reaches a high photoresponsivity (6.7 × 104 A/W) and photodetectivity (2.12 × 1013 Jones). These results highlighted solid-ionic memory for building up multifunctional electronic and optoelectronic devices.

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Section: Resultsmentioning

confidence: 99%

Solid-Ionic Memory in a van der Waals Heterostructure

Chen¹,

Guo

Wang³

et al. 2022

ACS Nano

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“…Relation (37) shows that function K p (N D ) is non-monotonic and can vary by several orders of magnitude ( Figure 3b). Value…”

Section: Concentrationmentioning

confidence: 99%

“…From physical essence of considered effects, it follows that similar effects can occur in other mediums with recombination of dissociative or ion-ion type, for example, in multicomponent plasma [36]. More details about topic are given in [37][38][39][40][41][42][43][44][45][46].…”

Section: N B a B B B A B B A A A B A A B B B A B B A A B A A B B B A mentioning

confidence: 99%

The Theory of Giant Splash of Photoresponse in Semiconductors at Low-Level Illumination with Increasing Concentration of Deep Recombination Impurity

Kholodnov¹,

Nikitin²

2015

Optoelectronics - Materials and Devices

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Recombination of excess nonequilibrium electrons and holes in semiconductors through impurity recombination centers traps known as trap-assisted ShockleyRead-Hall recombination is in many cases the dominant process. In this chapter, we develop the general theory of trap-assisted recombination and study in detail two key characteristics dependences of excess charge carriers' lifetime and photoelectric gain on concentration N of recombination centers and effectiveness of band-toband photoexcitation of charge carriers and photo-emf in semiconductors at low-level illumination considered outside quasi-neutrality approximation.

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“…In the stationary case the charged state of the recombination-impurity atoms will then be determined by the equation R=R, (2) where the electron and hole recombination-generation rates R and R , respectevely, due to the trapping of carries by the acceptor and thermal transfer of the carries from the recombination level into allowed bands, are …”

Section: Main Relationsmentioning

confidence: 99%

<title>On the degree to which the increase in the concentration of the recombination centers raises the efficiency of interband photoexcitation of carriers under weak optical radiation</title>

Kholodnov¹,

Drugova²

2003

SPIE Proceedings

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The results of consistent (beyond the commonly used approximation of quasi-neutrality) theoretical analysis ofthe efficiency of inter-band photoexcitation of carriers in the case of absorption ofweak optical radiation and non-equilibrium carrier recombination via deep impurity are presented. The model of a single recombination deep acceptor level and shallow donor impurity is considered. It is shown that the carrier photoexcitation efficiency can be drasticly increased at the cost of increase in the concentration of recombination centers. Also it is shown that the solution beyond approximation of quasi-neutrality may be basically differed from the quasi-neutral solutions.

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Character of the dependences of non-equilibrium electron and hole lifetimes on the concentration of recombination centres in impurity-type-recombination semiconductors

Cited by 23 publications

References 3 publications

Solid-Ionic Memory in a van der Waals Heterostructure

Solid-Ionic Memory in a van der Waals Heterostructure

The Theory of Giant Splash of Photoresponse in Semiconductors at Low-Level Illumination with Increasing Concentration of Deep Recombination Impurity

<title>On the degree to which the increase in the concentration of the recombination centers raises the efficiency of interband photoexcitation of carriers under weak optical radiation</title>

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